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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:元件和材料
收藏年代
2000~2024
全部
2000
2001
2002
2013
2015
2020
2021
2022
2023
2024
2000, vol.100, no.141
2000, vol.100, no.271
2000, vol.100, no.272
2000, vol.100, no.320
2000, vol.100, no.371
2000, vol.100, no.395
2000, vol.100, no.396
2000, vol.100, no.485
2000, vol.100, no.486
题名
作者
出版年
年卷期
Low temperature epitaxial growth property of Si films by ECR plasma deposition
Yukio Yoshida; Yukihiro Takahashi; Kimihiro Sasaki
2000
2000, vol.100, no.396
Proposal of chemical sputtering method and its application to prepare large grain size poly-Si films
Koji Kamesaki; Atsushi Masuda; Akira Izumi; Hideki Matsumura
2000
2000, vol.100, no.396
Controlling the position of the grain boundary in an Si film crystallized by linearly polarized laser beam
Yasunori Nakata; Susumu Horita
2000
2000, vol.100, no.396
Low temperature growth of 3C-SiC by triode plasma CVD using monomethylsilane
Tomohiko Maeda; Yuzuru Narita; Kanji Yasui; Tadashi Akahane
2000
2000, vol.100, no.396
Generation of NH{sub}3 plasma using a helical antenna and an attempt of nitridation of semiconductor surfaces
Tatsurou Arayama; Satoshi Okutani; Kanji Yasui; Masashi Akahane
2000
2000, vol.100, no.396
Preparation of crystalline carbon thin film by hot filament-assisted sputtering (faculty of engineering, Shinshu University)
Y. Matsumoto; S. Takeda; M. Nakao; K. Kamimura; Y. Onuma
2000
2000, vol.100, no.396
Estimation of specific contact resistance for extremely low value resistor
Shinsuke Okada; Soichiro Ibaraki; Masato Nakao; Yosiharu Onuma; Kiichi Kamimura; Hidemi Ohe; Toshiyuki Sakuma
2000
2000, vol.100, no.396
Nb doped SnO{sub}2 transparent conductive oxide films for analog type touch panels
E. Kishio; N. Kikuchi; E. Kusano; H. Nanto; A. Kinbara
2000
2000, vol.100, no.396
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