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2000, vol.100, no.295	2000, vol.100, no.296	2000, vol.100, no.373	2000, vol.100, no.374	2000, vol.100, no.477	2000, vol.100, no.517
2000, vol.100, no.603	2000, vol.100, no.652	2000, vol.100, no.653	2000, vol.100, no.668

题名	作者	出版年	年卷期
Ir film deposition on an epitaxial (100)ZrN/(100)Si substrate treated by HF + hydrazine solution	Sadayoshi Horii; Takeo Toda; Susumu Horita	2000	2000, vol.100, no.652
Al{sub}2O{sub}3/Si{sub}3N{sub}4 buffer layer for MFIS structures	Yoshihisa Fujisaki; Hiroshi Ishiwara	2000	2000, vol.100, no.652
Effect of Bi content on physical properties of Bi{sub}2SiO{sub}5 thin films	Masaki Yamaguchi; Takao Nagatomo; Yoichiro Masuda	2000	2000, vol.100, no.652
Preparation of (Bi,La){sub}4Ti{sub}3O{sub}12 films by the sol-gel technique and application to the MFMIS structures	Takeaki Isobe; Eisuke Tokumitsu; Takeshi Kijima; Hiroshi Ishiwara	2000	2000, vol.100, no.652
Analysis of retention characteristics of MFIS and MIFIS structures	Mitsue Takahashi; Kazushi Kodama; Minoru Noda; Masanori Okuyama	2000	2000, vol.100, no.652
Preparation and characterization of MIS and MFIS structures using MgO buffer I-layer	Hironori Fujisawa; Shuhei Murata; Hiromasu Matsuoka; Tatsuya Bandou; Masaru Shimizu; Hirohiko Niu	2000	2000, vol.100, no.652
Fabrication and electrical properties of ferroelectric-gate FET with epitaxial gate structure	S. Migita; K. Sakamaki; S. -B. Xiong; H. Ota; Y. Tarui; S. Sakai	2000	2000, vol.100, no.652
Crystal structures and ferroelectric properties of oxide-ferroelectric materials used for FeRAMs	Y. Shimakawa; Y. Kubo; Y. Tauchi; T. Kamiyama; H. Asano	2000	2000, vol.100, no.652