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2000, vol.100, no.295	2000, vol.100, no.296	2000, vol.100, no.373	2000, vol.100, no.374	2000, vol.100, no.477	2000, vol.100, no.517
2000, vol.100, no.603	2000, vol.100, no.652	2000, vol.100, no.653	2000, vol.100, no.668

题名	作者	出版年	年卷期
The formation of ruthenium electrodes by the chemical vapor deposition from a Ru(C{sub}5H{sub}4C{sub}2H{sub}2){sub}2 precursor dissolved in tetrahydrofurane	Y. Shimamoto; M. Hiratani; Y. Matsui; T. Nabatame	2000	2000, vol.100, no.653
Low temperature preparation and orientation control of high quality SrBi{sub}2Ta{sub}2O{sub}9 thin films	Norimasa Nukaga; Masatoshi Mitsuya; Hiroshi Funakubo	2000	2000, vol.100, no.653
Preparation and characterization of Pb(Mg{sub}(1/3)Nb{sub}(2/3))O{sub}3 thin film capacitors	T. Nabatame; T. Suzuki; T. Okamoto; S. Watahiki; M. Ogihara; M. Tanaka; H. Matsuyama	2000	2000, vol.100, no.653
Degradation of Pt/PLZT/Pt capacitors caused by hydroxyl group in interlayer dielectrics	Kazufumi Suenaga; Kiyoshi Ogata; Hiromichi Waki; Mitshiro Mori	2000	2000, vol.100, no.653
Morphotropic phase boundaries and physical properties	Y. Ishibashi	2000	2000, vol.100, no.653