中国机械工程学会生产工程分会知识服务平台

期刊


ISSN8756-6990
刊名Optoelectronics, Instrumentation and Data Processing
参考译名光电子学、仪表与数据处理
收藏年代2000~2023



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2000 2001 2002 2003 2004 2005
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2001, no.1 2001, no.2 2001, no.3 2001, no.4 2001, no.5 2001, no.6

题名作者出版年年卷期
Physical and technical aspects of micro-and optoelectronicsV. V. Vasilyev; S. A. Dvoretsky; D. G. Esaev; T. I. Zakharyash; A. G. Klimenko; A. I. Kozlov; I. V. Marchishin; V. N. Ovsyuk; N. Kh. Talipov; Yu G. Sidorov; A. O. Suslyakov20012001, no.3
Donor defects in MBE-grown HgCdTe epitaxial layersV. S. Varavin; S. A. Dvoretsky; N. N. Mikhailov; Yu G. Sidorov20012001, no.3
Application of in situ ellipsometry to control heteroepitaxy of wide-band semiconductors and characterize their optical propertiesV. A. Shvets; M. V. Yakushev; Yu G. Sidorov20012001, no.3
Study of ZnTe epitaxial layers on GaAs(310) substrates by means of ellipsometry and X-ray photoelectron spectroscopyM. V. Yakushev; V. A. Shvets; V. G. Kesler; Yu G. Sidorov20012001, no.3
Survivability and fault-tolerance of photodetecting systemsV. A. Melentiev; E. I. Cherepov; I. B. Chistokhin20012001, no.3
The blocking P{sup}(++)-P{sup}(+)-p contain silicon IR photodetectors with p-type conductivityA. V. Dvurechenskii; A. P. Kovchavtsev; G. L. Kuryshev; I. A. Ryazantsev20012001, no.3
Photodielectric effect in epitaxial Pb{sub}(1-x)Sn{sub}xTe films produced by molecular beam epitaxyA. E. Kimov; V. N. Shumskii20012001, no.3
Metastable phases and changes of △n{sub}e in H{sub}xLi{sub}(1-x)TaO{sub}3 layers for a low hydrogen contentV. V. Atuchin; C. C. Ziling; T. I. Grigoryeva; I. E. Kalabin20012001, no.3
Technology of high-contrast electro-optical KTiOPO{sub}4 modulatorsA. V. Gorchakov; A. L. Belostotsky; V. K. Sapozhnikov; V. A. Rusov; A. B. Meshalkin; A. B. Kaplun20012001, no.3
Production of Al{sub}xGa{sub}(1-x)As solid solutions and epitaxial structures for high-power field-effect transistorsT. S. Shamirzaev; A. I. Toropov; A. K. Bakarov; K. S. Zhuravlev; Yu N. Rakov; Yu B. Myakishev20012001, no.3
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