中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2011 2012
2013 2014 2017 2018 2019 2020
2021 2022 2023 2024

2001, vol.11, no.1 2001, vol.11, no.2 2001, vol.11, no.3 2001, vol.11, no.4

题名作者出版年年卷期
RF CMOS reliabilitySasan Naseh; M. Jamal Deen20012001, vol.11, no.4
SOI CMOS transistors for RF and microwave applicationsD. Flandre; J. -P. Raskin; D. Vanhoenacker-Janvier20012001, vol.11, no.4
RF CMOS noise characterization and modelingChih-Hung Chen; M. Jamal Deen20012001, vol.11, no.4
MOSFET modeling for RF IC designYuhua Cheng20012001, vol.11, no.4
MOSFET modeling and parameter extraction for RF IC'SMinkyu Je; Ickjin Kwon; Hyungcheol Shin; Kwyro Lee20012001, vol.11, no.4
RF MOS measurementsFranz Sischka; Thomas Gneiting20012001, vol.11, no.4
MOSFET gate oxide reliability, anode hole injection model and its applicationsYee-Chia Yeo; Qiang Lu; Chenming Hu20012001, vol.11, no.3
Breakdown modes and breakdown statistics of ultra thin SiO{sub}2 gate oxidesJordi Sune; David Jimenez; Enrique Miranda20012001, vol.11, no.3
Physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO{sub}2 dielectricsJ. W. McPherson20012001, vol.11, no.3
Reliability of flash nonvolatile memoriesNeal Mielke; Jian Chen20012001, vol.11, no.3
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