中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2024



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023
2024

2001, vol.101, no.107 2001, vol.101, no.108 2001, vol.101, no.246 2001, vol.101, no.247 2001, vol.101, no.320 2001, vol.101, no.321
2001, vol.101, no.350 2001, vol.101, no.430 2001, vol.101, no.515 2001, vol.101, no.571 2001, vol.101, no.573 2001, vol.101, no.718
2001, vol.101, no.719

题名作者出版年年卷期
Study of rapid thermal oxidation (RTO) and in-situ steam generation (ISSG) thin SiO{sub}2 films by gradient etching preparationN. Nagai; H. Hashimoto; T. Matsunobe; Y. Muraji; Y. Otsuka20012001, vol.101, no.107
Study on direct tunneling by WKB method for very thin SiO{sub}2 film on p-type or n-type Si(100)Y. Takami; Y. Kitagawa; N. Matsuo20012001, vol.101, no.107
Statistical analysis of soft and hard breakdown in ultrathin gate oxidesWataru Mizubayashi; Yuichi Yoshida; Seiichi Miyazaki; Masataka Hirose20012001, vol.101, no.107
Influence of organic contamination on hot-electron degradation of thin thermal silicon dioxidesShin Yokoyama; Kentaro Shibahara; Anri Nakajima; Takamaro Kikkawa; Hideo Sunami; Quazi D. M. Khosru; Takenobu Yoshino20012001, vol.101, no.107
Evaluation of impurity depletion effect near n{sup}+poly-Si gate side wall/SiO{sub}2 interfaces for sub-100nm nMOSFETsH. Murakami; T. Mihara; S. Miyazaki; M. Hirose20012001, vol.101, no.107
Low temperature nitridation of Si oxide utilizing activated nitrogenYukiharu Uraoka; Kosuke Sasada; Hiroshi Yano; Tomoaki Hatayama; T. Fuyuki20012001, vol.101, no.107
Atomic-layer-deposited silicon-nitride/SiO{sub}2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistorsTakashi Yoshimoto; Toshirou Kidera; Quazi D. M. Khosru; Anri Nakajima; Shin Yokoyama20012001, vol.101, no.107
The kinetics at the interface of TiO{sub}2 gate stackM. Hiratani; M. Kadoshima; Y. Shimamoto; T. Nabatame; S. Kimura20012001, vol.101, no.107
The influence of electrodes on the characteristics of (Ba,Sr)TiO{sub}3N. Fujiwara; H. Yamada; T. Kidera; S. Miyazaki; F. Nishiyama; T. Kikkawa20012001, vol.101, no.107



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