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题名	作者	出版年	年卷期
Low-temperature formation of high-k gate dielectric MIS structure	Shin-ichi Nakao; Munekatsu Nakagawa; Ichiro Ohshima; Hiroyuki Shimada; Tadahiro Ohmi	2001	2001, vol.101, no.108
New deposition technique of VCD-Ta{sub}2O{sub}5, ZrO{sub}2 films for reducing surface roughness	T. Takahashi; S. Aoyama; H. Shinriki	2001	2001, vol.101, no.108
Energy band alignment and energy distribution of electronic defect states for ZrO{sub}2/Si(100) systems	M. Narasaki; M. Ogasawara; M. Yamaoka; H. Murakami; S. Miyazaki; M. Hirose	2001	2001, vol.101, no.108
Preparation and characterization of ZrO{sub}2 high-k gate insulator films by PLD	Satoshi Kitai; Masayuki Sougawa; Hirofumi Kanda; Takeshi Kanashima; Masanori Okuyama	2001	2001, vol.101, no.108
Structural and electrical characteristics of HfO{sub}2 films fabricated by pulsed laser deposition	Hiroya Ikeda; Satoru Goto; Kazutaka Honda; Mitsuo Sakashita; Akira Sakai; Shigeaki Zaima; Yukio Yasuda	2001	2001, vol.101, no.108
HfO{sub}2 film deposition by MOCVD using Hf(NEt{sub}2){sub}4 as a source gas	Y. Ohshita; A. Ogura; A. Hoshino; T.Suzuki; H. Machida	2001	2001, vol.101, no.108