中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:硅器件和材料
收藏年代2000~2024



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2000 2001 2002 2009 2013 2014
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2024

2001, vol.101, no.107 2001, vol.101, no.108 2001, vol.101, no.246 2001, vol.101, no.247 2001, vol.101, no.320 2001, vol.101, no.321
2001, vol.101, no.350 2001, vol.101, no.430 2001, vol.101, no.515 2001, vol.101, no.571 2001, vol.101, no.573 2001, vol.101, no.718
2001, vol.101, no.719

题名作者出版年年卷期
The arrangement of metallo protein for the fabrication of nano columnsGen Yamazaki; Yukiharu Uraoka; Takasi Fuyuki; Norihisa Mino; Ichirou Yamashita20012001, vol.101, no.515
Fabrication of nano-device using ferritin proteinT. Hikono; Y. Uraoka; T. Fuyuki; I. Yamashita20012001, vol.101, no.515
Preparation of PrO{sub}x gate insulators using pulsed laser depositionS. Kitai; M. Sohgawa; H. Kanda; T. Kanashima; M. Okuyama20012001, vol.101, no.515
Effect of Bi content on physical properties of Bi{sub}4Ti{sub}3O{sub}12/Bi{sub}2SiO{sub}5/Si structuresMasaki Yamaguchi; Takao Nagatomo; Yoichiro Masuda20012001, vol.101, no.515
Epitaxial growth of isotopically pure Si layer and application to Si self-diffusion studyYukio Nakabayashi; Hirman Irwan Osman; Kazunari Toyonaga; Kaori Yokota; Satoru Matsumoto; Junichi Murota; Kazumi Wada; Takao Abe20012001, vol.101, no.515
Surface passivation of silicon substrates using quinhydrone/methanol treatmentHidetaka Takato; Isao Sakata; Ryuichi Shimokawa20012001, vol.101, no.515
Electrical properties and structure of silicon oxide nitrided by thermal oxynitridation or RPNMasatoshi Arai; Takahiko Hashidzume; Yoshinori Odake; Ichiro Matsuo20012001, vol.101, no.515
The influence of silicon nitride film on the electrical characteristics of MOS capacitorsHiroki Sakamoto; Hiroko Kubo; Yasuhiro Kawasaki; Kenji Yoneda; Akira Takeishi20012001, vol.101, no.515
Reduction of defect states and improvement of SiO{sub}2/Si interface by high pressure H{sub}2O vapor treatmentToshiyuki Sameshima; Tadashi Watanabe; Nobuyuki Andoh20012001, vol.101, no.515
Influence of extension formation process on indium halos profileKentaro Shibahara; Dai Onimatsu20012001, vol.101, no.515
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