中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2024



全部

2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023
2024

2001, vol.101, no.107 2001, vol.101, no.108 2001, vol.101, no.246 2001, vol.101, no.247 2001, vol.101, no.320 2001, vol.101, no.321
2001, vol.101, no.350 2001, vol.101, no.430 2001, vol.101, no.515 2001, vol.101, no.571 2001, vol.101, no.573 2001, vol.101, no.718
2001, vol.101, no.719

题名作者出版年年卷期
Sub-50-nm gate length CMOS technology and supply-voltage optimizationHitoshi Wakabayashi20012001, vol.101, no.571
Impact of radical oxynitridation on characteristics & reliability of sub-1.5 nm-thick gate-dielectric FETs with narrow channel and shallow trench isolationMitsuhiro Togo; Koji Watanabe; Masayuki Terai; Toshinori Fukai; Mitsuru Narihiro; Koichi Arai; Toyoji Yamamoto; Toru Tatsumi; Tohru Mogami20012001, vol.101, no.571
Non-uniform boron penetration through nitrided oxide in PMOSFETsTakayuki Aoyama; Hidenobu Fukutome; Kunihiro Suzuki; Hiroko Tashiro; Yoko Tada; Hiroshi Arimoto; Kei Horiuchi; Shigehiko Hasegawa; Hisao Nakashima20012001, vol.101, no.571
Effects of interface oxide layer on HfO{sub}2 gate dielectricsYusuke Morisaki; Yoshihiro Sugita; Sergey Pidin; Kiyoshi Irino; Takayuki Aoyama20012001, vol.101, no.571
0.11 μm fully-depleted SOI CMOS devices with 26nm silicon layer fabricated by bulk compatible processH. Komatsu; H. Nakayama; K. Koyama; K. Matsumoto; T. Ohno; K. Takeshita20012001, vol.101, no.571
Current driveability enhancement of partially-depleted SOI MOSFET by body-terminal-controlled capacitive-couplingMichiru Hogyoku20012001, vol.101, no.571
Study of self-heating influence on device performance of 0.1μm SOI MOSFETs including velocity overshootS. Kawanaka; K. Matsuzawa; K. Inoh; Y. Katsumata; M. Yoshimi; H. Ishiuchi20012001, vol.101, no.571
Argon implantation effects in SOI NMOSFET'sTomoaki Shino; Hideaki Nii; Shigeru Kawanaka; Kazumi Inoh; Yasuhiro Katsumata; Makoto Yoshimi; Hidemi Ishiuchi20012001, vol.101, no.571



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