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题名	作者	出版年	年卷期
Preparation and characterization of a-and b-axes-oriented epitaxially grown	Takayuki Watanabe; Hiroshi Isa; Atsushi Sasaki; Mamoru Yoshimoto; Minoru Osada; Yuji Noguchi; Masaru Miyayama; Keisuke Saito; Toshimasa Suzuki; Masayuki Fujimoto; Hiroshi Funakubo	2001	2001, vol.101, no.718
New PZT crystallization technique by using flash lamp for FeRAM devices	Koji Yamakawa; Keitaro Imai; Osamu Arisumi; Tsunetoshi Arikado; Masaki Yoshioka; Tatsushi Owada; Katsuya Okumura	2001	2001, vol.101, no.718
Low temperature growth of PZT thin films by MOCVD and effects of seeding	Mamuro Okaniwa; Hironori Fujisawa; Masaru Shimizu; Hirohiko Niu	2001	2001, vol.101, no.718
Low coercive field of SrBi{sub}2Ta{sub}2O{sub}9 by La-substitution and vacancy introduction - control of ferroelectric properties through defect engineering	Masaru Miyayama; Yuji Noguchi	2001	2001, vol.101, no.718
Change of MFIS characteristics of Bi{sub}4Ti{sub}3O{sub}12 thin film compositions	Masaki Yamaguchi; Takao Nagatomo; Yoichiro Masuda	2001	2001, vol.101, no.718
Characterization of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structures using (Bi,La){sub}4Ti{{sub}3O{sub}12 and high capacitance buffer layers	Takuya Suzuki; Eisuke Tokumitsu	2001	2001, vol.101, no.718
1T2C-type ferroelectric memory	Satoru Ogasawara; Hiroshi Ishiwara	2001	2001, vol.101, no.718
Trends of embedded FRAM technology	Seigen Otani; Tooru Endo	2001	2001, vol.101, no.718