中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2024



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2000 2001 2002 2009 2013 2014
2015 2017 2020 2021 2022 2023
2024

2002, vol.102, no.133 2002, vol.102, no.134 2002, vol.102, no.271 2002, vol.102, no.272 2002, vol.102, no.346 2002, vol.102, no.416

题名作者出版年年卷期
Impact of recoiled-oxygen-free processing on 1.5nm SiON gate-dielectric in sub-100nm CMOS technologyMitsuhiro Togo; Tohru Mogami20022002, vol.102, no.133
Study on reaction mechanism of plasma nitridation process for formation of ultra-thin gate dielectricsKatsuyuki Sekine; Seiji Inumiya; Hironobu Fukui; Mariko Takayanagi; Ichiro Mizushima; Yoshitaka Tsunashima20022002, vol.102, no.133
Improving reliability of ultra thin silicon nitride gate dielectric film directly grown at low temperature by microwave-excited high-density plasmaWeitao Cheng; Ichiro Oshima; Hiroyuki Shimada; Yasuhiro Ono; Masaki Hirayama; Akinobu Teramoto; Sigetoshi Sugawa; Tadahiro Ohmi20022002, vol.102, no.133
Low temperature formation of ultra thin gate oxynitride films utilizing activated oxygen/nitrogenTakao Imaoku; Kousuke Sasada; Hiroshi Yano; Tomoaki Hatayama; Yukiharu Uraoka; Takashi Fuyuki20022002, vol.102, no.133
Formation of ultrathin gate dielectric using cat-CVD technologyRui Morimoto; Akiko Kikkawa; Akira Izumi; Hideki Matsumura20022002, vol.102, no.133
Quantum mechanical analysis of MOSFETs with ultrathin gate oxideShin-ichi Saito; Yasuhiro Shimamoto; Kazuyoshi Torii; Masahiko Hiratani; Takahiro Onai; Shin'ichiro Kimura20022002, vol.102, no.133
Gate capacitance measurement using CBCM methodTakeshi Okagaki; Motoaki Tanizawa; Tatsuya Kunikiyo; Kazunobu Ohta; Hiroyuki Amishiro; Kiyoshi Ishikawa; Yasuo Inoue; Norihiko Kotani20022002, vol.102, no.133
Evaluation of mobility in the MOSFET with large leakage currentY. Shimamoto; O. Tonomura; K. Torii; M. Hiratani20022002, vol.102, no.133
The gate oxide evaluation methods using an LF/HF impedance analyzerShigeru Kawabata; Toshimasa Sekino20022002, vol.102, no.133
Energy barrier for valence electrons at SiO{sub}2/Si(111) interfaceKensuke Takahashi; Mustafa Bin Seman; Kazuyuki Hirose; Takeo Hattori20022002, vol.102, no.133
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