中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：硅器件和材料
收藏年代2000～2024



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2024

2002, vol.102, no.133 2002, vol.102, no.134 2002, vol.102, no.271 2002, vol.102, no.272 2002, vol.102, no.346 2002, vol.102, no.416

题名作者出版年年卷期
Effect of in-situ nitrogen incorporation for electrical characteristics of thin Al{sub}2O{sub}3 gate oxideYoshiaki Tanida; Yasuyuki Tamura; Masaomi Yamaguchi; Shinji Miyagaki; Chikako Yoshida; Yoshihiro Sugiyama; Hitoshi Tanaka20022002, vol.102, no.134
Analysis of chemical bonding features and determination of energy band profile for CVD aluminum oxynitride/Si(100) heterostructuresAtsushi Suyama; Hirokazu Yokoi; Masahiro Narasaki; Wataru Mizubayashi; Hideki Murakami; Seiichi Miyazaki20022002, vol.102, no.134
Electrical characterization of AlO{sub}x:N gate dielectric formed by layer-by-layer CVDH. Murakami; H. Yokoi; W. Mizubayashi; H. Yamashita; X. Gao; S. Miyazaki20022002, vol.102, no.134
Thermal chemical vapor deposition of zirconium/hafnium-silicate thin-film using TEOS and tert-butoxideSeiji Inumiya; Dawei Gao; Kazuhiro Eguchi20022002, vol.102, no.134
Analysis of ZrO{sub}2/Si interface by high-resolution RBSKaoru Sasakawa20022002, vol.102, no.134
Deposition technique of HfO{sub}2 film by MOCVD using Hf[N(C{sub}2H{sub}5){sub}2]{sub}4K. Kubo; T. Takahashi; H. Shinriki20022002, vol.102, no.134
The growth of ZrO{sub}2 and the gate insulation film characteristic by limited-reaction sputtering the format of technical reportKentaro Kawai; Tatsuhiro Hasu; Kousin Monju; Ryou Izumi; Kimihiro Sasaki; Tomonobu Hata20022002, vol.102, no.134
Molybdenum work function control by N{sup}+ implantation for dual gate CMOS application and its influencesTakaaki Amada; Masaki Hino; Nobuhide Maeda; Kentaro Shibahara20022002, vol.102, no.134
The influence of electrode on the characteristics of (Ba,Sr)TiO{sub}3Hiroshi Yamada; Takamaro Kikkawa20022002, vol.102, no.134
Influence of Si substrate crystal orientation on the properties of (Ba,Sr)TiO{sub}3M. Yamato; H. Yamada; K. Quazi; T. Kikkawa20022002, vol.102, no.134



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