中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：集成电路
收藏年代2000～2024



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2022 2023 2024

2002, vol.102, no.2 2002, vol.102, no.234 2002, vol.102, no.3 2002, vol.102, no.525 2002, vol.102, no.82 2002, vol.102, no.83

题名作者出版年年卷期
A quasi-matrix ferroelectric memory for future silicon storage - a new high-density and high-speed nonvolatile memory using ferroelectric filmToshiyuki Nishihara; Yasuyuki Ito20022002, vol.102, no.3
Design of ferroelectric-based logic-in-memory VLSIHirmitsu Kimura; Takahiro Hanyu; Michitaka Kameyama; Yoshikazu Fujimori; Takashi Nakamura; Hidemi Takasu20022002, vol.102, no.3
Development of nonvolatile logic with ferroelectric capacitorsYoshikazu Fujimori; Takashi Nakamura; Hidemi Takasu20022002, vol.102, no.3
Development of 0.1μm-rule MRAM cellKiyotaka Tsuji; Katsumi Suemitsu; Tomonori Mukai; Kiyokazu Nagahara; Koichi Masubuchi; Hiraoki Utsumi; Kuniko Kikuta20022002, vol.102, no.3
Impact of lower dot size scaling on charge retention in doubly stacked Si dot memoryRyuji Ohba; Naoharu Sugiyama; Junji Koga; Ken Uchida20022002, vol.102, no.3
MEID: reliable nonvolatile memory concept using nano-dot storage nodeTo Mo Yuki Ishii; Taro Osabe; Toshiyuki Mine; Fumio Murai; Kazuo Yano20022002, vol.102, no.3
SESO: scalable memory using ultra-thin polycrystalline siliconTo Mo Yuki Ishii; Taro Osabe; Toshiyuki Mine; Fumio Murai; Kazuo Yano20022002, vol.102, no.3
Panel Discussion: what is the most suitable on-chip memory for 90-65nm CMOS technologyKoichiro Ishibashi20022002, vol.102, no.3



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