中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2024



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2004, vol.14, no.1 2004, vol.14, no.2 2004, vol.14, no.3 2004, vol.14, no.4

题名作者出版年年卷期
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Dynamic BreakdownJ. Kostamovaara; M. E. Levinshtein; S. Vainshtein20042004, vol.14, no.4
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Avalanche InjectionJ. Kostamovaara; M. E. Levinshtein; S. Vainshtein20042004, vol.14, no.4
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Static Avalanche BreakdownJ. Kostamovaara; M. E. Levinshtein; S. Vainshtein20042004, vol.14, no.4
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Avalanche MultiplicationJ. Kostamovaara; M. E. Levinshtein; S. Vainshtein20042004, vol.14, no.4
BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES: Introductory ChapterJ. Kostamovaara; M. E. Levinshtein; S. Vainshtein20042004, vol.14, no.4
INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT AND THE BREAKDOWN VOLTAGE IN 4H-S1C SITYOUNG CHUL CHOI; HO-YOUNG CHA; LESTER F. EASTMAN; MICHAEL G. SPENCER20042004, vol.14, no.3
ION IMPLANTED SiC STATIC INDUCTION TRANSISTOR WITH 107 W OUTPUT POWER AND 59% POWER ADDED EFFICIENCY UNDER CW OPERATION AT 750 MHZG. C. DE SALVO; P. M. ESKER; T. A. FLINT; J. A. OSTOP; E. J. STEWART; T. J. KNIGHT; K. J. PETROSKY; S. D. VAN CAMPEN; R. C. CLARKE; G. M. BATES20042004, vol.14, no.3
ANALYTICAL MODEL FOR NON-SELF ALIGNED BURIED P-LAYER SiC MESFETR. S. GUPTA; SANDEEP KUMAR AGGARWAL; RITESH GUPTA; MRIDULA GUPTA; SUBHASIS HALDAR20042004, vol.14, no.3
EFFECTS OF BUFFER LAYER THICKNESS AND DOPING CONCENTRATION ON SiC MESFET CHARACTERISTICSSANKHA S. MUKHERJEE; SYED S. ISLAM20042004, vol.14, no.3
SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD-PLATE SiC MESFETsHO-YOUNG CHA; Y. C. CHOI; LESTER F. EASTMAN; MICHAEL G. SPENCER20042004, vol.14, no.3
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