中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2024



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2004, vol.14, no.1 2004, vol.14, no.2 2004, vol.14, no.3 2004, vol.14, no.4

题名作者出版年年卷期
QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP HI-NITRIDESK. W. KIM; V. A. KOCHELAP; V. N. SOKOLOV; S. M. KOMIRENKO20042004, vol.14, no.1
HIGH FIELD TRANSPORT IN AlNRAMON COLLAZO; RAOUL SCHLESSER; ZLATKO SITAR20042004, vol.14, no.1
INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORSG. SIMIN; M. ASIF KHAN; M. S. SHUR; R. GASKA20042004, vol.14, no.1
GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICESSERGEY L. RUMYANTSEV; NEZIH PALA; MICHAEL S. SHUR; MICHAEL E. LEVINSHTEIN; REMIS GASKA; M. ASIF KHAN; GRIGORY SIMIN20042004, vol.14, no.1
High Voltage AlGaN/GaN Heterojunction TransistorsL. S. McCarthy; N-Q. Zhang; H. Xing; B. Moran; S. DenBaars; U. K. Mishra20042004, vol.14, no.1
ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHINGYAN GAO; ILAN BEN-YAACOV; UMESH MISHRA; EVELYN HU20042004, vol.14, no.1
Electronic Properties of GaN (0001) - Dielectric InterfacesT. E. Cook, Jr.; C. C. Fulton; W. J. Mecouch; R. F. Davis; G. Lucovsky; R. J. Nemanich20042004, vol.14, no.1
GROWTH OF THICK GaN FILMS AND SEEDS FOR BULK CRYSTAL GROWTHP. R. TAVERNIER; E. V. ETZKORN; D. R. CLARKE20042004, vol.14, no.1
CRACKING OF GaN FILMSE. V. ETZKORN; D. R. CLARKE20042004, vol.14, no.1
STRAIN OF GaN LAYERS GROWN USING 6H-SiC(0001) SUBSTRATES WITH DIFFERENT BUFFER LAYERSS. EINFELDT; Z. J. REITMEIER; R. F. DAVIS20042004, vol.14, no.1
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