中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0129-1564
刊名International Journal of High Speed Electronics and Systems
参考译名国际高速电子学与系统杂志
收藏年代2000～2024



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2004, vol.14, no.1 2004, vol.14, no.2 2004, vol.14, no.3 2004, vol.14, no.4

题名作者出版年年卷期
VERTICAL SCALING OF TYPE I InP HBT WITH F{sub}T > 500 GHZJ. W. LAI; W. HAFEZ; M. FENG20042004, vol.14, no.3
NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTsDMITRY VEKSLER; MICHAEL S. SHUR; V. E. HOUTSMA; N. G. WEIMANN; Y. K. CHEN20042004, vol.14, no.3
TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATORQINGMIN LIU; SURA JIT SUTAR; ALAN SEABAUGH20042004, vol.14, no.3
BENCHMARK RESULTS FOR HIGH-SPEED 4-BIT ACCUMULATORS IMPLEMENTED IN INDIUM PHOSPHIDE DHBT TECHNOLOGYSTEVEN EUGENE TURNER; DAVID E. KOTECKI20042004, vol.14, no.3
ATOMICALLY FLAT III-ANTIMONIDE EPILAYERS GROWN USING LIQUID PHASE EPITAXYANIKA KUMAR; SUJATHA SRIDARAN; P. S. DUTTA20042004, vol.14, no.3
NATIVE DEFECT COMPENSATION IN III-ANTIMONIDE BULK SUBSTRATESROBINSON PINO; YOUNGOK KO; PARTHA S. DUTTA20042004, vol.14, no.3
NOISE AND THZ RECTIFICATION CHARACTERISTICS OF ZERO-BIAS QUANTUM TUNNELING SB-HETEROSTRUCTURE DIODESARTTU LUUKANEN; ERICH N. GROSSMAN; HARRIS P. MOVER; JOEL N. SCHULMAN20042004, vol.14, no.3
TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORONR. T. TROEGER; T. N. ADAM; S. K. RAY; P.-C. LV; S. KIM; J. KOLODZEY20042004, vol.14, no.3
TWO-DIMENSIONAL ANALYTICAL MODELING AND SIMULATION OF RETROGRADE DOPED HMG MOSFETR. S. GUPTA; KIRTI GOEL; MRIDULA GUPTA; MANOJ SAXENA20042004, vol.14, no.3
ELECTRICAL EFFECTS OF DNA MOLECULES ON SILICON FIELD EFFECT TRANSISTORG. XUAN; J. KOLODZEY; V. KAPOOR; G. GONYE20042004, vol.14, no.3
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