中国机械工程学会生产工程分会知识服务平台

期刊


刊名Advanced Electronic Materials
参考译名先进电子材料
收藏年代2019～2025



全部

2019 2020 2021 2022 2023 2024
2025

2019, vol.5, no.1 2019, vol.5, no.10 2019, vol.5, no.11 2019, vol.5, no.12 2019, vol.5, no.2 2019, vol.5, no.3
2019, vol.5, no.4 2019, vol.5, no.5 2019, vol.5, no.6 2019, vol.5, no.7 2019, vol.5, no.8 2019, vol.5, no.9

题名作者出版年年卷期
Artificial Synapses: Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic Computing (Adv. Electron. Mater. 9/2019)Kim Sung‐Il; Lee Yeongjun; Park Min‐Ho; Go Gyeong‐Tak; Kim Young‐Hoon; Xu Wentao; Lee Hyeon‐Dong; Kim Hobeom; Seo Dae‐Gyo; Lee Wanhee; Lee Tae‐Woo20192019, vol.5, no.9
Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3‐Terminal DevicesGonzalez‐Rosillo Juan Carlos; Ortega‐Hernandez Rafael; Arndt Benedikt; Coll Mariona; Dittmann Regina; Obradors Xavier; Palau Anna; Su?e Jordi; Puig Teresa20192019, vol.5, no.9
Dimensionality Dependent Plasticity in Halide Perovskite Artificial Synapses for Neuromorphic ComputingKim Sung‐Il; Lee Yeongjun; Park Min‐Ho; Go Gyeong‐Tak; Kim Young‐Hoon; Xu Wentao; Lee Hyeon‐Dong; Kim Hobeom; Seo Dae‐Gyo; Lee Wanhee; Lee Tae‐Woo20192019, vol.5, no.9
Weight Programming in DNN Analog Hardware Accelerators in the Presence of NVM VariabilityMackin Charles; Tsai Hsinyu; Ambrogio Stefano; Narayanan Pritish; Chen An; Burr Geoffrey W.20192019, vol.5, no.9
2D Atomic Crystals: A Promising Solution for Next‐Generation Data StorageHou Xiang; Chen Huawei; Zhang Zhenhan; Wang Shuiyuan; Zhou Peng20192019, vol.5, no.9
Nanowire Memristors: Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires (Adv. Electron. Mater. 9/2019)Milano Gianluca; Porro Samuele; Valov Ilia; Ricciardi Carlo20192019, vol.5, no.9
Masthead: (Adv. Electron. Mater. 9/2019) 20192019, vol.5, no.9
Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide NanowiresMilano Gianluca; Porro Samuele; Valov Ilia; Ricciardi Carlo20192019, vol.5, no.9
Low Power Parylene‐Based Memristors with a Graphene Barrier Layer for Flexible Electronics ApplicationsChen Qingyu; Lin Min; Wang Zongwei; Zhao Xiaolong; Cai Yimao; Liu Qi; Fang Yichen; Yang Yuchao; He Ming; Huang Ru20192019, vol.5, no.9
S‐Type Negative Differential Resistance in Semiconducting Transition‐Metal DichalcogenidesWang Miao; Wang Chen‐Yu; Wu Chenchen; Li Qiao; Pan Chen; Wang Cong; Liang Shi‐Jun; Miao Feng20192019, vol.5, no.9
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