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期刊
ISSN
1063-7397
刊名
Russian Microelectronics
参考译名
俄罗斯微电子学
收藏年代
2002~2023
全部
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2020, vol.49, no.1
2020, vol.49, no.2
2020, vol.49, no.3
2020, vol.49, no.4
2020, vol.49, no.5
2020, vol.49, no.6
2020, vol.49, no.7
2020, vol.49, no.8
题名
作者
出版年
年卷期
Study of the Magneto-Optical Properties of Structures on Curved Surfaces for Creating Memory Elements on Magnetic Vortices
A. V. Prokaznikov; V. A. Paporkov
2020
2020, vol.49, no.5
Charge Transport Mechanism in a Formless Memristor Based on Silicon Nitride
O. M. Orlov; A. A. Gismatulin; V. A. Gritsenko; D. S. Mizginov
2020
2020, vol.49, no.5
Ab Initio Modeling of the Electronic and Energy Structure and Opening the Band Gap of a 4
p
-Element-Doped Graphene Monolayer
M. M. Asadov; S. S. Guseinova; V. F. Lukichev
2020
2020, vol.49, no.5
Study of the Relaxational Polarization Dynamics of the LiPON Solid Electrolyte
A. S. Rudyi; M. E. Lebedev; A. A. Mironenko; L. A. Mazaletskii; V. V. Naumov; A. V. Novozhilova; I. S. Fedorov; A. B. Churilov
2020
2020, vol.49, no.5
Simulation of Resistive Switching in Memristor Structures Based on Transition Metal Oxides
A. E. Rogozhin; O. O. Permyakova
2020
2020, vol.49, no.5
Simulation of Transients in a Majority Gate upon Switching and Collecting Charge from the Track of a Single Particle
V. Ya. Stenin; Yu. V. Katunin
2020
2020, vol.49, no.5
Modeling the Characteristics of SOI CMOS Nanotransistors with an Asymmetric Surrounding Gate
N. V. Masal’skii
2020
2020, vol.49, no.5
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