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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2021, vol.50, no.1 2021, vol.50, no.2 2021, vol.50, no.3 2021, vol.50, no.4 2021, vol.50, no.5 2021, vol.50, no.6
2021, vol.50, no.8

题名作者出版年年卷期
Kinetics of the Volumetric and Heterogeneous Processes in the Plasma of a C4F8+ O2+ Ar MixtureA. M. Efremov; D. B. Murin; A. M. Sobolev; K.-H. Kwon20212021, vol.50, no.1
Influence of Deposition Conditions and Ion-Plasma Treatment of Thin Cobalt Films on Their Electrical ResistivityI. I. Amirov; R. V. Selyukov; V. V. Naumov; E. S. Gorlachev20212021, vol.50, no.1
Metallization of Vias in Silicon Wafers to Produce Three-Dimensional MicrostructuresA. I. Vorobjova; V. A. Labunov; E. A. Outkina; D. V. Grapov20212021, vol.50, no.1
Numerical Simulation of Cryogenic Etching: Model with Delayed DesorptionM. K. Rudenko; A. V. Myakon’kikh; V. F. Lukichev20212021, vol.50, no.1
Experimental Study of the Influence of the Porosity of Thin-Film Silicon-Based Anodes on Their Charge-Discharge CharacteristicsT. L. Kulova; L. A. Mazaletskii; A. A. Mironenko; A. S. Rudyi; A. M. Skundin; Yu. S. Tortseva; I. S. Fedorov20212021, vol.50, no.1
Domain Wall Precession in a Narrow Magnetic NanowireO. S. Trushin; N. I. Barabanova20212021, vol.50, no.1
Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS TransistorV. B. Odzhaev; A. N. Petlitskii; V. S. Prosolovich; V. A. Filipenya; V. Yu. Yavid; Yu. N. Yankovskii20212021, vol.50, no.1
Influence of Resist Spreading during Its Dry Electron-Beam Etching on a Lateral ResolutionA. E. Rogozhin; A. G. Isaev; F. A. Sidorov20212021, vol.50, no.1
Effect of a Mixture’s Composition on the Electrophysical Parameters and Emission Spectra of Hydrogen Chloride Plasma with Chlorine and HeliumS. A. Pivovarenok; D. B. Murin; D. V. Sitanov20212021, vol.50, no.1
Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony IonsS. D. Brinkevich; D. I. Brinkevich; V. S. Prosolovich20212021, vol.50, no.1



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