中国机械工程学会生产工程分会知识服务平台

期刊


刊名Advanced Electronic Materials
参考译名先进电子材料
收藏年代2019～2025



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2019 2020 2021 2022 2023 2024
2025

2023, vol.9, no.1 2023, vol.9, no.10 2023, vol.9, no.11 2023, vol.9, no.12 2023, vol.9, no.2 2023, vol.9, no.3
2023, vol.9, no.4 2023, vol.9, no.5 2023, vol.9, no.6 2023, vol.9, no.7 2023, vol.9, no.8 2023, vol.9, no.9

题名作者出版年年卷期
Electrical Detection of Magnetic Skyrmions in a Magnetic Tunnel JunctionYao Guang; Like Zhang; Junwei Zhang; Yadong Wang; Yuelei Zhao; Riccardo Tomasello; Senfu Zhang; Bin He; Jiahui Li; Yizhou Liu; Jiafeng Feng; Hongxiang Wei; Mario Carpentieri; Zhipeng Hou; Junming Liu; Yong Peng; Zhongming Zeng; Giovanni Finocchio; Xixiang Zhang; John Michael David Coey; Xiufeng Han; Guoqiang Yu20232023, vol.9, no.1
Output and Negative‐Region Characteristics in Organic Anti‐Ambipolar TransistorsJunyi Zhu; Takehiko Mori20232023, vol.9, no.1
High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite MemristorsZehen Liu; Hao Tang; Pengpeng Cheng; Ruyan Kang; Jian Zhou; Xian Zhao; Jia Zhao; Zhiyuan Zuo20232023, vol.9, no.1
2023: Year of Re‐DebutLu Shi20232023, vol.9, no.1
Filament Formation in TaOx Thin Films for Memristor Device Application: Modeling Electron Energy Loss Spectra and Electron TransportJie Jiang; Ruth Pachter; Krishnamurthy Mahalingam; Jim Ciston; Rohan Dhall; Robert J. Bondi; Matthew J. Marinella; Donald A. Telesca; Sabyasachi Ganguli20232023, vol.9, no.1
All‐Electric Spin Device Operation Using the Weyl Semimetal, WTe2, at Room TemperatureKosuke Ohnishi; Motomi Aoki; Ryo Ohshima; Ei Shigematsu; Yuichiro Ando; Taishi Takenobu; Masashi Shiraishi20232023, vol.9, no.1
Protons: Critical Species for Resistive Switching in Interface‐Type MemristorsSundar Kunwar; Chase Bennett Somodi; Rebecca A. Lalk; Bethany X. Rutherford; Zachary Corey; Pinku Roy; Di Zhang; Markus Hellenbrand; Ming Xiao; Judith L. MacManus‐Driscoll; Quanxi Jia; Haiyan Wang; J. Joshua Yang; Wanyi Nie; Aiping Chen20232023, vol.9, no.1
Nonvolatile Electrochemical Random‐Access Memory under Short CircuitDiana S. Kim; Virgil J. Watkins; Laszlo A. Cline; Jingxian Li; Kai Sun; Joshua D. Sugar; Elliot J. Fuller; A. Alec Talin; Yiyang Li20232023, vol.9, no.1
Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice StructureKan‐Hao Xue; Jinhai Huang; Jun‐Hui Yuan; Wenlin Wang; Ge‐Qi Mao; Lanqing Zou; Shengxin Yang; Hong Lu; Huajun Sun; Xiangshui Miao; Na Bai20232023, vol.9, no.1
Large and Tunable Magnetoresistance in Cr1?xTe/Al2O3/Cr1?xTe Vertical Spin Valve DeviceZhansheng gao; Jiabiao Chen; Zheshan Zhang; Zhaochao Liu; Yu Zhang; Lingyun Xu; Jinxiong Wu; Feng Luo20232023, vol.9, no.1
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