中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
Slight gate oxide thickness increase in POMES devices with BF2 implanted polysilicon gateJiunn-Yann Tsai; Ying Shi; Sharad Prasad; Stanley W. -C. Yeh; Rajat Rakkhit19981998, vol.19, no.9
Simulation of SOI devices and circuits using BSIM3SOIDennis Sinitsky; Stephen Tag; Arun Jangity; Fariborz Assaderaghi; Ghavam Shahidi; Chenming Hu19981998, vol.19, no.9
Schottky-clamped NMOS Transistors implemented in a conventional 0.8-μm CMOS processFeng-Jung Huang; Kenneth K. O.19981998, vol.19, no.9
Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon filmsGary K. Giust; Thomas W. Sigmon; Paul G. Carey; B. Weiss; Gray A. Davis19981998, vol.19, no.9
Leakage current comparison between ultra- thin Ta2O5 films and conventional gate dielectricsQiang Lu; Donggun Park; Alexander Kalnitsky; Celene Chang; Chia-Cheng Cheng; Sing Pin Tay;19981998, vol.19, no.9
InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltageM. Zaknoune; B. Bonte; C. Gaquiere; Y. Cordier; Y. Druelle; D. Theron; Y. Crosnier19981998, vol.19, no.9
Gate-induced drain-leakage in buried-channel PMOS--a limiting factor in development of low-cost, high-performance 3.3-V, 0.25-μm technologyRamin Ghodsi; Shahin Sharifzadeh; Jithender Majjiga19981998, vol.19, no.9
Excellent low-pressure-oxidized Si3N4 films on roughened poly-Si for high-density DRAM'sHan-Wen Liu; Huang-Chung Cheng19981998, vol.19, no.9
Enhanced hot-carrier induced degradation in shallow trench isolated narrow channel PMOSFET'sJone F. Chen; Kazunari Ishimaru; Chenming Hu19981998, vol.19, no.9
Device analysis for a-Si:H thin-film transistors with organic passivation layerJung-Kee Yoon; Jeong-Hyun Kim19981998, vol.19, no.9
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