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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
1998, vol.19, no.1
1998, vol.19, no.10
1998, vol.19, no.11
1998, vol.19, no.12
1998, vol.19, no.2
1998, vol.19, no.3
1998, vol.19, no.4
1998, vol.19, no.5
1998, vol.19, no.6
1998, vol.19, no.7
1998, vol.19, no.8
1998, vol.19, no.9
题名
作者
出版年
年卷期
Characterization of bolometers based on polycrystalline silicon germanium alloys
S. Sedky; P. Fiorini; M. Caymax; C. Baert; L. Hermans; R. Mertens
1998
1998, vol.19, no.10
Effect of Schottky barrier alteration on the low-frequency noise of InP-based HEMT's
H. van Meer; M. Valenza; K. van der Zhanden; W. D. Raedt; E. Simoen; D. Schreurs; L. Kanufmann
1998
1998, vol.19, no.10
Generalized scale length for two-dimensional effects in MOSFET's
D. J. Frank; Y. Taur; Hon-Sum P. Wong
1998
1998, vol.19, no.10
Low-frequency noise characterization of latent damage in thin oxides subjected to high-field impulse stressing
W. K. Chim; B. P. Yeo; P. S. Lim; D. S. H. Chan
1998
1998, vol.19, no.10
Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFET's
Y. Shi; T. P. Ma; S. Prasad; S. Dhanda
1998
1998, vol.19, no.10
Schottky-contact gated-four-probe a-Si:H TFT structure: A new structure to investigate the electrical instability of a-Si:H TFT
Chun-Sung Chiang; Chun-ying Chen; J. Kanicki
1998
1998, vol.19, no.10
Terahertz detector utilizing tow-dimensional electronic fluid
Jian-Qiang Lu; M. S. Shur; J. L. Hesler; L. Sun; R. Weikle
1998
1998, vol.19, no.10
Tunneling leakage current in ultrathin (<4nm) nitride/oxide stack dielectrics
Ying Shi; Xiewen Wang; T. P. Ma
1998
1998, vol.19, no.10
Ultralow-voltage boron-doped diamond field emitter vacuum diode
W. P. Kang; A. Wisitsora-at; J. L. Davidson; D. V. Kerns
1998
1998, vol.19, no.10
Ultrathin nitride/oxide (N/O) gate dielectrics for p&&+-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD/thermal oxidation process
Y. Wu; G. Lucovsky
1998
1998, vol.19, no.10
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