中国机械工程学会生产工程分会知识服务平台
主页
文献资源
外文期刊
外文会议
中文期刊
专业机构
生产工程
智能制造
高级检索
关于我们
版权声明
使用帮助
期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
1998, vol.19, no.1
1998, vol.19, no.10
1998, vol.19, no.11
1998, vol.19, no.12
1998, vol.19, no.2
1998, vol.19, no.3
1998, vol.19, no.4
1998, vol.19, no.5
1998, vol.19, no.6
1998, vol.19, no.7
1998, vol.19, no.8
1998, vol.19, no.9
题名
作者
出版年
年卷期
A new gradual hole injection dual-gate LIGBT
Byeong-Hoon Lee; Jung-Hoon Chun; Seong-Dong Kim; Dae-Seok Byeon; Won-Oh Lee; Min-Koo Han; Yearn-Ik Choi
1998
1998, vol.19, no.12
A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistors
Nicola Bovolon; R. Schultheis; J. -E. Muller; P. Zwicknagl; Enrico Zanoni
1998
1998, vol.19, no.12
CB-BRT: A new base resistance-controlled thyristor employing a self-aligned corrugated P-Base
Dae-Seok Byeon; Byeong-Hoon Lee; Doo-Young Kim; Min-Koo Han; Yearn-Ik Choi
1998
1998, vol.19, no.12
Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination
Yoshifumi Takanashi; Kiyoto Takahata; Yoshifumi Muramoto
1998
1998, vol.19, no.12
Comprehensive analysis of reverse short-channel effect in silicon MOSFET's from low-temperature operation
B. Szelag; F. Balestra; Gerard Ghibaudo
1998
1998, vol.19, no.12
Effects of die location on hot-carrier response of plasma-etched NMOS devices
V. Janapaty; M. Oner; B. L. Bhuva; N. Bui; S. E. Kerns
1998
1998, vol.19, no.12
Flicker noise in GaN/Al{}0.15Ga{}0.85N doped channel heterostructure field effect transistors
A. Balandin; S. Cai; R. Li; K. L. Wang; V. Ramgopal Rao; C. R. Viswanathan
1998
1998, vol.19, no.12
GaAs metal insulator field effect transistors with excellent intrinsic transconductance and stable drain currents using(NH{}4){}2S{}x chemical treatment
K. Remashan; K. N. Bhat
1998
1998, vol.19, no.12
High-performance polycrystalline SiGe thin-film transistors using Al{}2O{}3 gate insulators
Zhonghe Jin; Hoi S. Kwok; Man Wong
1998
1998, vol.19, no.12
High-voltage accumulation-layer UMOSFET's in 4H-SiC
J. Tan; J. A. Cooper, Jr.; M. R. Melloch
1998
1998, vol.19, no.12
1
2
国家科技图书文献中心
全球文献资源网
京ICP备05055788号-26
京公网安备11010202008970号 机械工业信息研究院 2018-2024