中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1998, vol.19, no.1 1998, vol.19, no.10 1998, vol.19, no.11 1998, vol.19, no.12 1998, vol.19, no.2 1998, vol.19, no.3
1998, vol.19, no.4 1998, vol.19, no.5 1998, vol.19, no.6 1998, vol.19, no.7 1998, vol.19, no.8 1998, vol.19, no.9

题名作者出版年年卷期
A high sensitivity lead-titanate (PbTiO3) pyroelectric thin-film infrared sensor with temperature isolation improvement structureJyh-Jier Ho; Y. K. Fang; K. H. Wu; W. T. Hsieh; C. W. Chu; C. R. Huang; M. S. Ju; C. P. Chang19981998, vol.19, no.6
A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD'sShengdong Zhang; Johnny K. O. Sin19981998, vol.19, no.6
A novel tow-step etching to suppress the charging damages during metal etching employing helicon wave plasmaHuang-Chung Cheng; Wendy Lin; Tzong-Kuei Kang; Yean-Chyi Perng; Bau-Tong Dai19981998, vol.19, no.6
A simplified impact ionization model based on the average energy of hot-electron subpopulationTing-Wei Tang; Joonwoo Nam19981998, vol.19, no.6
Electrical leakage at low-K polyimide/TEOS interfaceAlvin L. S. Loke; Jeffrey T. Wetzel; John J. Stankus; Matthew S. Angyal; Brian K. Mowry;19981998, vol.19, no.6
High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In0.34Al0.66As0.58Sb0.15 Schottky layerJan-Shing Su; Wei-Chou Hsu; Wei Lin; Shin-Yuh Jain19981998, vol.19, no.6
High-power 10-GHz operation of AlGaN HFET's on insulating SiCG. J. Sullivan; M. Y. Chen; J. A. Higgins; J. W. Yang; Q. Chen; R. L. Pierson; B. T. McDermott19981998, vol.19, no.6
Metal-ferroelectric-semiconductor (MFS) FET's using LiNbO3/Si(100) structures for nonvolatile memory applicationKwang-Ho Kim19981998, vol.19, no.6
Microdischarge in microbridge plasma display with holes in the cathodeKyung Cheol Choi19981998, vol.19, no.6
Self-aligned gate and source drain contacts in inverted-staggered a-Si:H thin-film transistors fabricated using selective area silicon PECVDC. S. Yang; W. W. Read; C. Arthur; E. Srinivasan; G. N. Parsons19981998, vol.19, no.6
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