中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0547-051X
刊名NEC Research & Development
参考译名日本电气公司研究与发展
收藏年代1999～2003

关联期刊参考译名收藏年代
NEC Technical Journal日本电气公司技报2006～2009
NEC Journal of Advanced Technology日本电气公司研究与发展2004～2005


全部

1999 2000 2001 2002 2003

1999, vol.40, no.1 1999, vol.40, no.2 1999, vol.40, no.3 1999, vol.40, no.4

题名作者出版年年卷期
Visual event-related potentials during oddball and delayed matching paradigms with motor responseToshimasa Yamazaki; Yoshiyuki Kuroiwa; Akihisa Kenmochi; Ken'ichi Kamijo; Kenzo Yamamoto19991999, vol.40, no.4
Single-electron transistors fabricated from a highly doped SOI filmToshitsugu Sakamoto; Hisao Kawaura; Toshio Baba19991999, vol.40, no.4
Practical application of UV/H{sub}2O{sub}2 treatment technique to DMSO wastewaterArata Toyoda; Keiji Hirano; Tatsuya Koito; Tsutomu Taira19991999, vol.40, no.4
Overview of nanotechnologyJun'ichi Sone19991999, vol.40, no.4
Optical device models for SPICE simulationHirohito Yamada19991999, vol.40, no.4
Nanometer electron beam lithographyYukinori Ochiai; Shoko Manako; Jun-ichi Fujita; Eiichi Nomura19991999, vol.40, no.4
Microscopic defect study in semiconductor nanostructuresThomas Wimbauer; Yasunori Mochizuki19991999, vol.40, no.4
Local dielectric breakdown in ultrathin SiO{sub}2 films: characterization by scanning tunneling microscopyHeiji Watanabe; Toshio Baba; Masakazu Ichikawa19991999, vol.40, no.4
High-performance low-temperature poly-Si TFTs and circuitsHideki Asada; Kenji Sera; Fujio Okumura19991999, vol.40, no.4
First-principles approach on atomic-scale origins of dielectric degradation of SiO{sub}2 gate insulatorAyumi Yokozawa; Yoshiyuki Miyamoto19991999, vol.40, no.4
123456789



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024