中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0547-051X
刊名NEC Research & Development
参考译名日本电气公司研究与发展
收藏年代1999～2003

关联期刊参考译名收藏年代
NEC Technical Journal日本电气公司技报2006～2009
NEC Journal of Advanced Technology日本电气公司研究与发展2004～2005


全部

1999 2000 2001 2002 2003

1999, vol.40, no.1 1999, vol.40, no.2 1999, vol.40, no.3 1999, vol.40, no.4

题名作者出版年年卷期
A 2.4-inch, SXGA low-temperature poly-Si TFT-LCD light valveHideki Asada; Kenji Sera; Kazumi Hirata; Hiroyuki Sekine; Nobuyuki Honbo; Takayuki Konno19991999, vol.40, no.4
A 200/400dpi photodiode-array integrated image sensor with a poly-Si TFT driverHiroshi Haga; Ichiro Fujieda; Fujio Okumura19991999, vol.40, no.4
Atomic beam holographyJun-ichi Fujita; Tetsuo Kishimoto; Makoto Morinaga; Satoru Mitake; Fujio Shimizu19991999, vol.40, no.4
Controlling the amount of Si-OH bonds for the formation of high-quality low-temperature gate oxides for poly-Si TFTsKatsuhisa Yuda; Hiroshi Tanabe19991999, vol.40, no.4
Development of poly-Si TFT in NECFujio Okumura19991999, vol.40, no.4
Development of whole molding technologyHisayuki Tsuruta; Toshiaki Shironouchi; Yoshiharu Ogata19991999, vol.40, no.4
EJ-MOSFETs: toward 10-nm-scale ultimately miniaturized MOSFETsHisao Kawaura; Toshitsugu Sakamoto; Jun-ichi Fujita; Yukinori Ochiai; Toshio Baba19991999, vol.40, no.4
Electronic structure calculations of quantum dotsKenji Hirose; Ned S. Wingreen19991999, vol.40, no.4
Excimer laser crystallized poly-Si TFTsHiroshi Okumura; Kenji Sera19991999, vol.40, no.4
First-principles approach on atomic-scale origins of dielectric degradation of SiO{sub}2 gate insulatorAyumi Yokozawa; Yoshiyuki Miyamoto19991999, vol.40, no.4
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