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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
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2007
1999, vol.20, no.1
1999, vol.20, no.10
1999, vol.20, no.11
1999, vol.20, no.12
1999, vol.20, no.2
1999, vol.20, no.3
1999, vol.20, no.4
1999, vol.20, no.5
1999, vol.20, no.6
1999, vol.20, no.7
1999, vol.20, no.8
1999, vol.20, no.9
题名
作者
出版年
年卷期
Threshold voltage dependence of LOCOS-isolated thin-film SOI NMOSFET on buried oxide thickness
Jong-Wook Lee; Hyung-Ki Kim; Min-Rok Oh; Yo-Hwan Koh
1999
1999, vol.20, no.9
Surface micromachined solenoid on-Si and on-glass inductors for RF applications
Jun-Bo Yoon; Bon-Kee Kim; Chul-Hi Han; Euisik Yoon; Choong-Ki Kim
1999
1999, vol.20, no.9
Observation of the bistable current-voltage characteristics in the highly doped multi-quantum well heterostructure
Chung-Kun Song; Do-Hyun Kim
1999
1999, vol.20, no.9
Monte carlo simulation for electron transport in MESFET's including realistic band structure of GaAs
Yuji Ando; Walter Contrata; Yasuko Hori; Norihiko Samoto
1999
1999, vol.20, no.9
High-frequency dependence of channel noise in short-channel RF MOSFET's
Tajinder Manku; Michael Obrecht; Yi Lin
1999
1999, vol.20, no.9
High-field electron velocity in silicon surface-accumulation layers
Emil Arnold; Theodore Letavic; Sam Kerko
1999
1999, vol.20, no.9
Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics
Effiong Ibok; Khaled Ahmed; Ming-Yin Hao; Bob Ogle; Jimmie J. Wortman; John R. Hauser
1999
1999, vol.20, no.9
Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technology
Ying-Che Tseng; W. Margaret Huang; Vida Ilderem; Jason C. S. Woo
1999
1999, vol.20, no.9
Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's
I. Daumiller; C. Kirchner; M. Kamp; K. J. Ebeling; E. Kohn
1999
1999, vol.20, no.9
Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N{sub}2O ambient
Moon-Sig Joo; In-Seok Yeo; Chan-Ho Lee; Heung-Jae Cho; Se-Aug Jang; Sahng-Kyoo Lee
1999
1999, vol.20, no.9
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