中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A GaAs MOSFET with a liquid phase oxidized gateJau-Yi Wu; Hwei-Heng Wang; Yeong-Her Wang; Mau-Phon Houng19991999, vol.20, no.1
A new numerical method for extraction of overlap capacitance in a-Si TFT'sHoan H. Pham; Arokia Nathan19991999, vol.20, no.1
A novel coplanar amorphous silicon thin-film transistor using silicide layersSung Ki Kim; Young Jin Choi; Won Kyu Kwak; Kyu Sik Cho; Jin Jang19991999, vol.20, no.1
An HBT noise model valid up to transit frequencyM. Rudolph; R. Doerner; L. Klapproth; P. Heymann19991999, vol.20, no.1
An improved test structure for recombination lifetime profile measurements in very thick silicon wafersS. Daliento; A. Sanseverino; P. Spirito19991999, vol.20, no.1
Arsenic and phosphorus double ion implanted source/drain junction for 0.25-and sub-0.25-μm MOSFET technologyHi-Deok Lee; Young-Jong Lee19991999, vol.20, no.1
Copper may destroy chip-level reliability: handle with care--mechanism and conditions for copper migrated resistive short formationGabor Harsanyi19991999, vol.20, no.1
Effect of IGBT switching dynamics on loss calculations in high speed applicationsA. Bhalla; J. Gladish; G. Dolny19991999, vol.20, no.1
Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistorsKuo-Ching Huang; Yean-Kuen Fang; Dun-Nian Yaung; Chii-Wen Chen; Mong-Song Liang; Jang-Cheng Hsieh; Chi-Wen Su19991999, vol.20, no.1
High-performance EEPROM's using n-and p-channel polysilicon thin-film transistors with electron cyclotron resonance N{sub}2O-plasma oxideNae-In Lee; Jin-Woo Lee; Hyoung-Sub Kim; Chul-Hi Han19991999, vol.20, no.1
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