中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A novel InP/InAlGaAs negative-differential resistance heterojunction bipolar transistor (NDR0-HBT) with interesting topee-shaped current-voltage characteristicsWen-Chau Liu; Wei-Chou Wang; Jing-Yuh Chen; Hsi-Jen Pan; Shiou-Ying Cheng; Kong-Beng Thei; Wen-Lung19991999, vol.20, no.10
Adaptive-learning neuron integrated circuits using metal-ferroelectric (SrBi{sub}2Ta{sub}2O{sub}9)-semiconductor (MFS) FET'sSung-Min Yoon; Eisuke Tokumitsu; Hiroshi Ishiwara19991999, vol.20, no.10
Analysis of capacitor breakdown mechanisms due to crystal-originated pitsToshiaki Ono; George Rozgonyi; Hiroshi Horie; Morimasa Miyazaki; Hideki Tsuya19991999, vol.20, no.10
Cell-based analytic statistical model with correlated parameters for intrinsic breakdown of ultrathin oxidesMing-Jer Chen; Huan-Tsung Huang; Jyh-Huei Chen; Chi-Wen Su; Chin-Shan Hou; Mong-Song Liang19991999, vol.20, no.10
Characterization of channel width dependence of gate delay in 0.18-μm CMOS technologyMyoung-Kyu Park; Hi-Deok Lee; Myoung-Jun Jang19991999, vol.20, no.10
Enhanced low-temperature corner current carrying inherent to shallow trench isolation (STI)Guofu Niu; John D. Cressler; Suraj J. Mathew; David C. Ahlgren19991999, vol.20, no.10
Exploration of velocity overshoot in a high-performance deep sub-0.1-μm SOI MOSFET with asymmetric channel profileBaohong Cheng; V. Ramgopal Rao; Jason C. S. Woo19991999, vol.20, no.10
Improved hot-electron reliability in high-performance, multilevel-metal CMOS using deucterated barrier-nitride processingW. F. Clark; T. G. Ference; S. W. Mittl; J. S. Burnham; E. D. Adams19991999, vol.20, no.10
Low-frequency noise properties of dynamic-threshold (DT) MOSFET'sTsun-Lai Hsu; Denny Duan-Lee Tang; Jeng Gong19991999, vol.20, no.10
Metamorphic InAlAs/InGaAs enhancement mode HEMT's on GaAs substratesKurt Eisenbeiser; Ravi Droopad; Jenn-Hwa Huang19991999, vol.20, no.10
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