中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A high-speed silicon single-electron random access memoryN. J. Stone; H. Ahmed; K. Nakazato19991999, vol.20, no.11
A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)O. Spulber; E. M. Sankara Narayanan; S. Hardikar; M. M. De Souza; M. Sweet; Subhas Chandra19991999, vol.20, no.11
A novel ultrathin elevated channel low-temperature poly-Si TFTShengdong Zhang; Chunxiang Zhu; Johnny K. O. Sin; Philip K. T. Mok19991999, vol.20, no.11
A polycrystalline silicon thin-film transistor with a thin amorphous bufferKyung Wook Kim; Kyu Sik Cho; Jin Jang19991999, vol.20, no.11
Accurately modeling the drain to source current in recessed gate P-HEMT devicesT. Fernandez; J. A. Garcia; A. Tazon; A. Mediavilla; J.C. Pedro; J. L. Garcia19991999, vol.20, no.11
Corner-parasitics-free low-cost trench isolationU. Schwalke; Z. Gabric; N. Elbel; K. Bothe; D. Hadawi; I. Janssen; P. Schon; A. Inioutis; R. Klose; J. Plagmann19991999, vol.20, no.11
Evidence of substrate enhanced high-energy tails in the distribution function of deep submicron MOSFET's by light emission measurementsM. Pavesi; Luca Selmi; M. Manfredi; Enrico Sangiorgi; Marco Mastrapasqua; Jeff D. Bude19991999, vol.20, no.11
High-mobility poly-Si TFT's fabricated on flexible stainless-steel substratesTadashi Serikawa; Fujio Omata19991999, vol.20, no.11
High-performance InGaP/In{sub}xGa{sub}(1-x)As HEMT with an inverted delta-doped V-shaped channel structureWen-Chau Liu; Wen-Lung Chang; Wen-Shiung Lour; Hsi-Jen Pan; Wei-Chou Wang; Jing-Yuh Chen; Kuo-Hui Yu; Shun-Ching Feng19991999, vol.20, no.11
Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA)Yen-Hao Shih; Jenn-Gwo Hwu19991999, vol.20, no.11
12



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024