中国机械工程学会生产工程分会知识服务平台
主页
文献资源
外文期刊
外文会议
中文期刊
专业机构
生产工程
智能制造
高级检索
关于我们
版权声明
使用帮助
期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
1999, vol.20, no.1
1999, vol.20, no.10
1999, vol.20, no.11
1999, vol.20, no.12
1999, vol.20, no.2
1999, vol.20, no.3
1999, vol.20, no.4
1999, vol.20, no.5
1999, vol.20, no.6
1999, vol.20, no.7
1999, vol.20, no.8
1999, vol.20, no.9
题名
作者
出版年
年卷期
A novel emitter-sharpened double-gate race-track-shaped field emitter structure
Baoping Wang; Zhongping Huang; Johnny K. O. Sin; Vincent M. C. Poon; Yongming Tang; Chen Wang; Kunxing Xue; Linsu Tong
1999
1999, vol.20, no.12
A novel planarized, silicon trench sidewall oxide-merged p-i-n Schottky (TSOX-MPS) rectifier
Rajesh N. Gupta; W. G. Min; T. P. Chow
1999
1999, vol.20, no.12
An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface
L. W. Snyman; M. du Plessis; E. Seevinck; H. Aharoni
1999
1999, vol.20, no.12
Counter-doped MOSFET's of 4H-SiC
Katsunori Ueno; Tadaaki Oikawa
1999
1999, vol.20, no.12
Experimental evaluation of impact ionization coefficients in GaN
Kazuaki Kunihiro; Kensuke Kasahara; Yuji Takahashi; Yasuo Ohno
1999
1999, vol.20, no.12
High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (1120) face
Hiroshi Yano; Taichi Hirao; Tsunenobu Kimoto; Hiroyuki Matsunami; Katsunori Asano; Yoshitaka Sugawara
1999
1999, vol.20, no.12
Improvement in hot carrier lifetime as a function of N{sub}2 ion implantation before gate oxide growth in deep submicron NMOS devices
Fernando J. Guarin; Stewart E. Rauch; III; Giuseppe La Rosa; Kevin Brelsford
1999
1999, vol.20, no.12
Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's
W. Kirklen Henson; Nian Yang; Jimmie J. Wortman
1999
1999, vol.20, no.12
Room temperature single electron effects in a Si nano-crystal memory
Ilgweon Kim; Sangyeon Han; Kwangseok Han; Jongho Lee; Hyungcheol Shin
1999
1999, vol.20, no.12
Shallow p{sup}+n junctions formed by using a two-step annealing scheme with low thermal budget
M. H. Juang; S. C. Harn
1999
1999, vol.20, no.12
1
2
国家科技图书文献中心
全球文献资源网
京ICP备05055788号-26
京公网安备11010202008970号 机械工业信息研究院 2018-2024