中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
0.2-μm p{sup}+ -n junction characteristics dependent on implantation and annealing processesShin-Nam Hong19991999, vol.20, no.2
Effects of longitudinal grain boundaries on the performance of MILC-TFT'sGururaj A. Bhat; Zhonghe Jin; Hoi S. Kwok; Man Wong19991999, vol.20, no.2
Electrical characteristics of an optically controlled n-channel AlGaAs/GaAs/InGaAs pseudomorphic HEMTDong Myong Kim; Sang Ho Song; Hwe Jong Kim; Kwang Nham Kang19991999, vol.20, no.2
High-performance laser-processed polysilicon thin-film transistorsG. K. Giust; T. W. Sigmon; J. B. Boyce; J. Ho19991999, vol.20, no.2
Impact of shallow source/drain on the short-channel characteristics of pMOSFET'sHajime Kurata; Toshihiro Sugii19991999, vol.20, no.2
On the tunneling component of charge pumping current in ultrathin gate oxide MOSFET'sPascal Masson; Jean-Luc Autran; Jean Brini19991999, vol.20, no.2
Simple method for estimating neutron-induced soft error rates based on modified BGR modelY. Tosaka; H. Kanata; S. Satoh; T. Itakura19991999, vol.20, no.2
The formation of Ti-polycide gate structure with high thermal stability using chemical-mechanical polishing (CMP) planarization technologyHyoung-Sub Kim; Dae-Hong Ko; Dae-Lok Bae; Kazuyuki Fujihara; Ho-Kyu Kang19991999, vol.20, no.2
Turn-on characteristics of polycrystalline silicon TFT's--impact of hydrogenation and channel lengthY. Z. Xu; F. J. Clough; E. M. S. Narayanan; Y. Chen; W. I. Milne19991999, vol.20, no.2



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