中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A new model for the post-stress interface trap generation in hot-carrier stressed P-MOSFET'sD. S. Ang; C. H. Ling19991999, vol.20, no.3
Amorphous-silicon thin-film transistor with liquid phase deposition of silicon dioxide gate insulatorJiun-lin Yeh; Si-Chen Lee19991999, vol.20, no.3
An enhanced erase mechanism during channel Fowler-Nordheim tunneling in flash EPROM memory devicesVei-Han Chan; David K. Y. Liu19991999, vol.20, no.3
Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT'sI. M. Anteney; G. Lippert; P. Ashburn; H. J. Osten; B. Heinemann; G. J. Parker; D. Knoll19991999, vol.20, no.3
Electrical characteristics of high-quality sub-25-A oxides grown by ultraviolet ozone exposure at low temperatureG. D. Wilk; B. Brar19991999, vol.20, no.3
Experimental method for the determination of the energy distribution of stress-induced oxide trapsAlessandro S. Spinelli; Andrea L. Lacaita; Matteo Rigamonti; Gabriella Ghidini19991999, vol.20, no.3
Metamorphic In{sub}0.4Al{sub}0.6As/In{sub}0.4Ga{sub}0.6As HEMT's on GaAs substrateS. Bollaert; Y. Cordier; V. Hoel; M. Zaknoune; H. Happy; S. Lepilliet; A. Cappy19991999, vol.20, no.3
Modulation-doped field-effect transistors with an 8-nm InGaAs/InAs/InGaAs quantum wellD. Xu; J. Osaka; Y. Umeda; T. Suemitsu; Y. Yamane; Y. Ishii19991999, vol.20, no.3
Photon counting 1060-nm hybrid photomultiplier with high quantum efficiencyRoss A. La Rue; Gary A. Davis; Dan Pudvay; Ken A. Costello; Verle W. Aebi19991999, vol.20, no.3
Planarized copper gate hydrogenated amorphous-silicon thin-film transistors for AM-LCD'sJe-Hsiung Lan; Jerzy Kanicki19991999, vol.20, no.3
12



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024