中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A metal-oxide-semiconductor varactorF. Svelto; P. Erratico; S. Manzini; R. Castello19991999, vol.20, no.4
A new bottom-gated poly-Si thin-film transistorKwon-Young Choi; Kee-Chan Park; Cheol-Min Park; Min-Koo Han19991999, vol.20, no.4
A novel technology to form air gap for ULSI applicationKow-Ming Chang; Ji-Yi Yang; Lih-Woen Chen19991999, vol.20, no.4
A silicon monolithic spiral transmission line balun with symmetrical designYeong J. Yoon; Yicheng Lu; Robert C. Frye; Peter R. Smith19991999, vol.20, no.4
Comparison of hole mobility in LOCOS-isolated thin-film SOI p-channel MOSFET's fabricated on various SOI substratesJong-Wook Lee; Hyung-Ki Kim; Ji-Woon Yang; Won-Chang Lee; Jeong-Hee Oh; Min-Rok Oh; Yo-Hwan Koh19991999, vol.20, no.4
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitorsW. K. Henson; K. Z. Ahmed; E. M. Vogel; J. R. Hauser; J. J. Wortman; R. D. Venables; M. Xu; D. Venab19991999, vol.20, no.4
Highly efficient enhancement-mode power heterojunction FET with multilayer cap and doped recess structure for 3.5-V digital cellular phonesYasunori Bito; Naotaka Iwata19991999, vol.20, no.4
High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substratesS. T. Sheppard; K. Doverspike; W. L. Pribble; S. T. Allen; J. W. Palmour; L. T. Kehias; T. J. Jenkin19991999, vol.20, no.4
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphireSuraj J. Mathew; Guofu Niu; Wadad B. Dubbelday; John D. Cressler; John A. Ott; Jack O. Chu; Patricia19991999, vol.20, no.4
Improvement on 1/f noise properties of nitrided n-MOSFET's by backsurface argon bombardmentP. T. Lai; Jing-Ping Xu; Y. C. Cheng19991999, vol.20, no.4
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