中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

1999, vol.20, no.1 1999, vol.20, no.10 1999, vol.20, no.11 1999, vol.20, no.12 1999, vol.20, no.2 1999, vol.20, no.3
1999, vol.20, no.4 1999, vol.20, no.5 1999, vol.20, no.6 1999, vol.20, no.7 1999, vol.20, no.8 1999, vol.20, no.9

题名作者出版年年卷期
A new approach to analyze the degradation and breakdown of thin SiO{sub}2 films under static and dynamic electrical stressR. Rodriguez; M. Nafria; E. Miranda; J. Sune; X. Aymerich19991999, vol.20, no.7
A novel 6H-SiC power DMOSFET with implanted p-well spacerVickram R. Vathulya; Huiling Shang; Marvin H. White19991999, vol.20, no.7
A novel cross-coupled inter-poly-oxide capacitor for mixed-mode CMOS processesMing-Jer Chen; Chin-Shan Hou19991999, vol.20, no.7
An 0.35-μM, 6-M, 6-mΩ, 43 μΩ-cm{sup}2 lateral power MOSFET for low-voltage, megahertz switching power applicationsNick X. Sun; Alex Q. Huang19991999, vol.20, no.7
An Al{sub}0.3Ga{sub}0.7N/GaN undoped channel heterostructure field effect transistor with F{sub}(max) of 107 GHzR. Li; S. J. Cai; L. Wong; Y. Chen; K. L. Wang; R. P. Smith; S. C. Martin; K. S. Boutros; J. M. Redwing19991999, vol.20, no.7
An analytical approximation for the excess noise factor of avalanche photodiodes with dead spaceMajeed M. Hayat; Zikuan Chen; Mohammad A. Karim19991999, vol.20, no.7
Channeling of low-energy implanted ions through the poly-Si gateG. Hobler; J. Bevk; A. Agarwal19991999, vol.20, no.7
Double-doped In{sub}0.35Al{sub}0.65As/In{sub}0.35Ga{sub}0.65As power heterojunction FET on GaAs substrate with 1 W output powerW. Contrata; N. Iwata19991999, vol.20, no.7
Drivability improvement on deep-submicron MOSFET's by elevation of source/drain regionsSatoshi Yamakawa; Kohei Sugihara; Taisuke Furukawa; Yasutaka Nishioka; Takumi Nakahata; Yuji Abe; Shigemitsu Maruno; Yasunori Tokuda19991999, vol.20, no.7
Electrical characteristics of new LDD poly-Si TFT structure tolerant to process misalignmentByung-Hyuk Min; Jerzy Kanicki19991999, vol.20, no.7
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