中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
Titanium hydride formation in Ti/Pt/Au-gated InP HEMTsRoxann R. Blanchard; Albert Cornet; Jesus A. del Alamo20002000, vol.21, no.9
Submicron super TFTs for 3-D VLSI applicationsHongmei Wang; Mansun Chan; Singh Jagar; Yangyuan Wang; Ping K. Ko20002000, vol.21, no.9
Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si{sub}(1-x)Ge{sub}x source/drainHsiang-Jen Huang; Kun-Ming Chen; Chun-Yen Chang; Liang-Po Chen; Guo-Wei Huang; Tiao-Yuan Huang20002000, vol.21, no.9
Reduced reverse narrow channel effect in thin SOI nMOSFETsChun-Yen Chang; Sun-Jay Chang; Tien-Sheng Chao; Sung-Dtr Wu; Tiao Yuan Huang20002000, vol.21, no.9
Optimization of implant anneals to improve transistor performance in a 0.15 μm CMOS technologyJeffrey Lutze; Tony Miranda; Greg Scott; Chris Olsen; Naushad Variam; Sandeep Mehta20002000, vol.21, no.9
N-type porous silicon doping using phosphorous oxychloride (POCl{sub}3)A. El-Bahar; S. Stolyarova; Y. Nemirovsky20002000, vol.21, no.9
Limitation of the Kirchhoff boundary conditions for aerial image simulation in 157-nm optical lithographyMichael S. Yeung; Eytan Barouch20002000, vol.21, no.9
Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circuitDouglas W. Barlage; James T. O'Keeffe; Jack T. Kavalieros; Michael M. Nguyen; Robert S. Chau20002000, vol.21, no.9
High channel density dual operation mode MOS-controlled thyristor with superior current saturation capabilityBudong You; V. A. K. Temple; Alex Q. Huang; Forrest Holroyd20002000, vol.21, no.9
High breakdown GaN HEMT with overlapping gate structureN. -Q. Zhang; S. Keller; G. Parish; S. Heikman; S. P. DenBaars; U. K. Mishra20002000, vol.21, no.9
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