中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
A new five-parameter MOS transistor mismatch modelTeresa Serrano-Gotarredona; Bernabe Linares-Barranco20002000, vol.21, no.1
High-voltage devices for 0.5-μm standard CMOS technologyCedric Bassin; Hussein Ballan; Michel Declercq20002000, vol.21, no.1
Hydrogenated amorphous silicon thin-film transistor with a thin gate insulatorYoung Jin Choi; Won Kyu Kwak; Kyu Sik Cho; Sung Ki Kim; Jin Jang20002000, vol.21, no.1
Impact of ultrashallow junction on hot carrier degradation of sub-0.25-μm nMOSFET'sKaori Nakamura; Eiichi Murakami; Shin'ichiro Kimura20002000, vol.21, no.1
Improved immunity to plasma damage in ultrathin nitrided oxidesChi-Chun Chen; Horng-Chih Lin; Chun-Yen Chang; Mong-Song Liang; Chao-Hsin Chien; Szu-Kang Hsien; Tiao-Yuan Huang20002000, vol.21, no.1
MOSFET 1/f noise measurement under switched bias conditionsA. P. van der Wel; E. A. M. Klumperink; S. L. J. Gierkink; R. F. Wassenaar; H. Wallinga20002000, vol.21, no.1
On the correlation between surface roughness and inversion layer mobility in Si-MOSFET'sA. Pirovano; A. L. Lacaita; G. Ghidini; G. Tallarida20002000, vol.21, no.1
On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressingZhi Chen; Karl Hess; Jinju Lee; Joseph W. Lyding; Elyze Rosenbaum; Isik Kizilyalli; Sundar Chetlur; Robert Huang20002000, vol.21, no.1
The leakage current improvement in an ultrashallow junction NMOS with Co silicided source and drainWoo-Tag Kang; Jeong-Seok Kim; Kang-Yoon Lee; Yoo-Cheol Shin; Tae-Heon Kim; Yong-Jik Park; Jong-Woo Park20002000, vol.21, no.1
Low noise In{sub}0.32(AlGa){sub}0.68As/In{sub}0.43Ga{sub}0.57As metamorphic HEMT on GaAs substrate with 850 mW/mm output power densityC. S. Whelan; W. E. Hoke; R. A. McTaggart; S. M. Lardizabal; P. S. Lyman; P. F. Marsh; T. E. Kazior20002000, vol.21, no.1
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