中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
A new lateral field emission device using chemical-mechanical polishingChoon-Sup Lee; Jae-Duk Lee; Chul-Hi Han20002000, vol.21, no.10
A new poly-Si thin-film transistor with poly-Si/a-Si double active layerKee-Chan Park; Kwon-Young Choi; Juhn-Suk Yoo; Min-Koo Han20002000, vol.21, no.10
AC floating body effects in partially depleted floating body SOI nMOS operated at elevated temperature: an analog circuit prospectiveYing-Che Tseng; W. Margaret Huang; Clifford Hwang; Jason C. S. Woo20002000, vol.21, no.10
An electrically and optically gate-controlled schottky/2DEG varactorAmro Anwar; Bahram Nabet; James Culp20002000, vol.21, no.10
BF{sub}2 and boron double-implanted source/drain junctions for sub-0.25-μm CMOS technologyFu Cheng Wang; Constantin Bulucea20002000, vol.21, no.10
Differential thermal budget in laser processing: application to formation of titanium silicideG. Verma; S. Talwar; J. C. Bravman20002000, vol.21, no.10
Experimental determination of electron drift velocity in 4H-SiC p{sup}+ -n-n{sup}+ avalanche diodesKonstantin V. Vassilevski; Konstantinos Zekentes; Alexander V. Zorenko; Leonid P. Romanov20002000, vol.21, no.10
High-frequency characterization of sub-0.25-μm fully depleted silicon-on-insulator MOSFETsC. L. Chen; R. H. Mathews; J. A. Burns; P. W. Wyatt; D. -R. Yost; C. K. Chen; M. Fritze; J. M. Knecht; V. Suntharalingam; A. Soares; C. L. Keast20002000, vol.21, no.10
Lateral RF SOI power MOSFETs with f{sub}T of 6.9 GHzK. Shenai; E. McShane; S. K. Leong20002000, vol.21, no.10
New programming and erasing schemes for p-channel flash memoryJong T. Park; Jeoung Y. Chun; Han K. Kim; Sung J. Jang; Chong G. Yu20002000, vol.21, no.10



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