中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
A novel self-aligned fabrication process for microwave static induction transistors in silicon carbideJ. P. Henning; A. Przadka; M. R. Melloch; J. A. Cooper, Jr.20002000, vol.21, no.12
A novel trench clustered insulated gate bipolar transistor (TCIGBT)O. Spulber; M. Sweet; K. Vershinin; C. K. Ngw; L. Ngwendson; J. V. S. C. Bose; M. M. De Souza; E. M. Sankara Narayanan20002000, vol.21, no.12
A shallow trench isolation using nitric oxide (NO)-annealed wall oxide to suppress inverse narrow width effectJongoh Kim; Taewoo Kim; Jaebeom Park; Woojin Kim; Byungseop Hong; Gyuhan Yoon20002000, vol.21, no.12
Air-gaps in 0.3 μm electrical interconnectionsPaul A. Kohl; Dhananjay M. Bhusari; Michael Wedlake; Carlye Case; Fred P. Klemens; John Miner; Byung-Chan Lee; Ronald J. Gutmann; Robert Shick20002000, vol.21, no.12
Anomalous diffusion of boron in silicon driven under the N{sub}2O ambientDon-Gey Liu; Wen Luh Yang; Jiang-Shihn Tsang; Kuo Wei Chu; Miin-Shyue Shiau; Shui-Yuan Yang; Yu Ming Hung20002000, vol.21, no.12
Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displaysYi He; Reiji Hattori; Jerzy Kanicki20002000, vol.21, no.12
Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f{sub}T > 60 GHzChing-Hui Chen; Robert Coffie; K. Krishnamurthy; Stacia Keller; Mark Rodwell; Umesh K. Mishra20002000, vol.21, no.12
Effect of starting SOI material quality on low-frequency noise characteristics in partially depleted floating-body SOI MOSFETsTakeo Ushiki; Hideaki Ishino; Tadahiro Ohmi20002000, vol.21, no.12
Electrical and reliability characteristics of an ultrathin TaO{sub}xN{sub}y gate dielectric prepared by ND{sub}3 annealing of Ta{sub}2O{sub}5Hyungsuk Jung; Kiju Im; Dooyoung Yang; Hyunsang Hwang20002000, vol.21, no.12
Electrical properties of RuO{sub}2 gate electrodes for dual metal gate Si-CMOSHuicai Zhong; Greg Heuss; Veena Misra20002000, vol.21, no.12
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