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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2000, vol.21, no.1
2000, vol.21, no.10
2000, vol.21, no.11
2000, vol.21, no.12
2000, vol.21, no.2
2000, vol.21, no.3
2000, vol.21, no.4
2000, vol.21, no.5
2000, vol.21, no.6
2000, vol.21, no.7
2000, vol.21, no.8
2000, vol.21, no.9
题名
作者
出版年
年卷期
A LDMOS technology compatible with CMOS and passive components for integrated RF power amplifiers
Yue Tan; Mahender Kumar; Johnny K. O. Sin; Jun Cai; Jack Lau
2000
2000, vol.21, no.2
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
M. Asif Khan; X. Hu; G. Sumin; A. Lunev; J. Yang; R. Gaska; M. S. Shur
2000
2000, vol.21, no.2
Highly uniform and low turn-on voltage Si field emitter arrays fabricated using chemical mechanical polishing
Meng Ding; Han Kim; Akintunde I. Akinwande
2000
2000, vol.21, no.2
Metamorphic In{sub}5.3Ga{sub}.47As/In{sub}5.2Al{sub}.48As HEMT's on germanium substrates
K. van der Zanden; D. Schreurs; P. Mijlemans; G. Borghs
2000
2000, vol.21, no.2
Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFET's
Feng-Tso Chien; Shien-Chin Chiol; Yi-Jen Chan
2000
2000, vol.21, no.2
Plasma hydrogenation of metal-induced laterally crystallized thin film transistors
Gururaj Bhat; Hoi Kwok; Man Wong
2000
2000, vol.21, no.2
Poly - Si thin-film transistors on steel substrates
Robert S. Howell; Mark Stewart; Sooraj V. Karnik; Sambit K. Saha; Miltiadis K. Hatalis
2000
2000, vol.21, no.2
Sub-100 nm Γ-gate MOSFET's with self-aligned drain extension formed by solid phase diffusion
Kun H. To; Jason C. S. Woo
2000
2000, vol.21, no.2
The dependence of channel length on channel width in narrow-channel CMOS devices for 0.35-0.13 μM technologies
Terence B. Hook; Serge Biesemans; James Slinkman
2000
2000, vol.21, no.2
The effects of interfacial sub-oxide transition regions and monolayer level nitridation on tunneling currents in silicon devices
Hanyang Yang; Hiro Niimi; Jeff W. Keister; Gerald Lucovsky; Jack E. Rowe
2000
2000, vol.21, no.2
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