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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2000, vol.21, no.1
2000, vol.21, no.10
2000, vol.21, no.11
2000, vol.21, no.12
2000, vol.21, no.2
2000, vol.21, no.3
2000, vol.21, no.4
2000, vol.21, no.5
2000, vol.21, no.6
2000, vol.21, no.7
2000, vol.21, no.8
2000, vol.21, no.9
题名
作者
出版年
年卷期
A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF{sub}2 pockets
S. Deleonibus; C. Caillat; G. Guegan; M. Heitzmann; M. E. Nier; S. Tedesco; B. Dal'zotto; F. Martin; P. Mur; A. M. Papon; G. Lecarval; S. Biswas; D. Souil
2000
2000, vol.21, no.4
A novel method for a smooth interface at poly-SiO{sub}x/SiO{sub}2 by employing selective etching
Jae-Hong Jeon; Juhn-Suk Yoo; Cheol-Min Park; Hong-Seok Choi; Min-Koo Han
2000
2000, vol.21, no.4
Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?
Jordi Sune; Giovanna Mura; Enrique Miranda
2000
2000, vol.21, no.4
Bake induced charge gain in NOR flash cells
R. Fastow; K. Ahmed; S. Haddad; M. Randolph; C. Huster; P. Hom
2000
2000, vol.21, no.4
Cz bifacial solar cells
C. del Canizo; A. Moehlecke; I. Zanesco; A. Luque
2000
2000, vol.21, no.4
Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks
Zhigang Wang; Chris G. Parker; Dexter W. Hodge; Robert T. Croswell; Nian Yang; Veena Misra; John R. Hauser
2000
2000, vol.21, no.4
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
Laegu Kang; Byoung Hun Lee; Wen-Jie Qi; Yongjoo Jeon; Renee Nieh; Sundar Gopalan; Katsunori Onishi; Jack C. Lee
2000
2000, vol.21, no.4
Fabrication and testing of surface micromachined polycrystalline SiC micromotors
A. Azzam Yasseen; Chien Hung Wu; Christian A. Zorman; Mehran Mehregany
2000
2000, vol.21, no.4
Gate length scaling in high performance InGaP/InGaAs/GaAs PHEMT's
P. Fay; K. Stevens; J. Elliot; N. Pan
2000
2000, vol.21, no.4
Graded gate VDMOSFET
Shuming Xu; Kian Paau Gan; Pang Dow Foo; Yi Su; Yong Liu
2000
2000, vol.21, no.4
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