中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2000, vol.21, no.1 2000, vol.21, no.10 2000, vol.21, no.11 2000, vol.21, no.12 2000, vol.21, no.2 2000, vol.21, no.3
2000, vol.21, no.4 2000, vol.21, no.5 2000, vol.21, no.6 2000, vol.21, no.7 2000, vol.21, no.8 2000, vol.21, no.9

题名作者出版年年卷期
A comparative study of the on-off switching behavior of metal-insulator-metal antifusesW. T. Li; D. R. McKenzie; W. Wiszniewski20002000, vol.21, no.6
A high-endurance low-temperature polysilicon thin-film transistor EEPROM cellJung-Hoon Oh; Hoon-Ju Chung; Nae-In Lee; Chul-Hi Han20002000, vol.21, no.6
Amorphous silicon thin-film transistor with fluorinated silicon oxide ion stopperKyung Wook Kim; Kyu Sik Cho; Jai Il Ryu; Keon Ho Yoo; Jin Jang20002000, vol.21, no.6
Comparison of photoresponsive drain conduction and gate leakage in N-channel pseudomorphic HEMT and MESFET under electro-optical stimulationsD. M. Kim; H. J. Kim; J. I. Lee; Y. J. Lee20002000, vol.21, no.6
Deep reactive ion etching for lateral field emission devicesVeljko Milanovic; Lance Doherty; Dana A. Teasdale; Chen Zhang; Siavash Parsa; Victorviet Nguyen; Matthew Last; Kris S. J. Pister20002000, vol.21, no.6
Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAM'sS. Satoh; Y. Tosaka; S. A. Wender20002000, vol.21, no.6
Improved performance and reliability of N{sub}2O-Grown oxynitride on 6H-SiCJ. P. Xu; P. T. Lai; C. L. Chan; B. Li; Y. C. Cheng20002000, vol.21, no.6
Nanometer-scale copper electrodeposition from an on-chip sourceMingshaw W. Wu; Lydia L. Sohn20002000, vol.21, no.6
Pre-breakdown in thin SiO{sub}2 filmsF. Crupi; B. Neri; S. Lombardo20002000, vol.21, no.6
Precision electrical trimming of very low TCR poly-SiGe resistorsJ. A. Babcock; P. Francis; R. Bashir; A. E. Kabir; D. K. Schroder; M. S. L. Lee; T. Dhayagude; W. Yindeepol; S. J. Prasad; A. Kalnitsky; M. E. Thomas; H. Haggag; K. Egan; A. Bergemont; P. Jansen20002000, vol.21, no.6
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