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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2000, vol.21, no.1
2000, vol.21, no.10
2000, vol.21, no.11
2000, vol.21, no.12
2000, vol.21, no.2
2000, vol.21, no.3
2000, vol.21, no.4
2000, vol.21, no.5
2000, vol.21, no.6
2000, vol.21, no.7
2000, vol.21, no.8
2000, vol.21, no.9
题名
作者
出版年
年卷期
A comparative study of the on-off switching behavior of metal-insulator-metal antifuses
W. T. Li; D. R. McKenzie; W. Wiszniewski
2000
2000, vol.21, no.6
A fully planarized 4H-SiC trench MOS barrier shcottky (TMBS) rectifier
V. Khemka; V. Ananthan; T. P. Chow
2000
2000, vol.21, no.6
A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell
Jung-Hoon Oh; Hoon-Ju Chung; Nae-In Lee; Chul-Hi Han
2000
2000, vol.21, no.6
A novel photodetector using MOS tunneling structures
C. W. Liu; W. T. Liu; M. H. Lee; W. S. Kuo; B. C. Hsu
2000
2000, vol.21, no.6
Amorphous silicon thin-film transistor with fluorinated silicon oxide ion stopper
Kyung Wook Kim; Kyu Sik Cho; Jai Il Ryu; Keon Ho Yoo; Jin Jang
2000
2000, vol.21, no.6
Comparison of photoresponsive drain conduction and gate leakage in N-channel pseudomorphic HEMT and MESFET under electro-optical stimulations
D. M. Kim; H. J. Kim; J. I. Lee; Y. J. Lee
2000
2000, vol.21, no.6
Deep reactive ion etching for lateral field emission devices
Veljko Milanovic; Lance Doherty; Dana A. Teasdale; Chen Zhang; Siavash Parsa; Victorviet Nguyen; Matthew Last; Kris S. J. Pister
2000
2000, vol.21, no.6
Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAM's
S. Satoh; Y. Tosaka; S. A. Wender
2000
2000, vol.21, no.6
High performance sub-0.25 μm devices using ultrathin oxide-nitride-oxide gate dielectric formed with low pressure oxidation and chemical vapor deposition
Y. Ma. J. L. Lee; M. S. Carroll; K. H. Lee
2000
2000, vol.21, no.6
Improved performance and reliability of N{sub}2O-Grown oxynitride on 6H-SiC
J. P. Xu; P. T. Lai; C. L. Chan; B. Li; Y. C. Cheng
2000
2000, vol.21, no.6
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