中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2000, vol.100, no.1 2000, vol.100, no.147 2000, vol.100, no.148 2000, vol.100, no.149 2000, vol.100, no.2 2000, vol.100, no.235
2000, vol.100, no.236 2000, vol.100, no.265 2000, vol.100, no.266 2000, vol.100, no.305 2000, vol.100, no.306 2000, vol.100, no.318
2000, vol.100, no.370 2000, vol.100, no.405 2000, vol.100, no.406 2000, vol.100, no.505 2000, vol.100, no.506 2000, vol.100, no.547
2000, vol.100, no.548 2000, vol.100, no.549 2000, vol.100, no.57 2000, vol.100, no.58 2000, vol.100, no.641 2000, vol.100, no.642
2000, vol.100, no.683

题名作者出版年年卷期
A study on the characteristics of high performance self-aligned asymmetric structure (SAAS)Chang-Soon Choi; Kyung-Whan Kim; Woo-Young Choi20002000, vol.100, no.147
Excimer laser annealing for 0.1μm MOSFETsTakashi Noguchi; Michitaka Kubota; Hiroshi Yamamoto; Kouichi Matsumoto; Machio Yamagishi20002000, vol.100, no.147
Analysis of a high performance self-aligned elevated source drain MOSFET with reduced gate-induced drain-leakageKyung-Whan Kim; Chang-Soon Choi; Woo-Young Choi20002000, vol.100, no.147
New process technologies for copper/low-k metallization - abrasive-free copper CMP (AFP) and new low-k material: methyl-silicon-oxycarbide (MTES)Kenji Hinode; Sei-ichi Kondo; Takeshi Furusawa; Noriyuki Sakuma; Daisuke Ryzaki; Ken-ichi Takeka; Shun-taro Machida; Yasushi Goto; Hizuru Yamaguchi; Yoshio Homma20002000, vol.100, no.147
Sub 4-nm polyoxide using ECR (electron cyclotron resonance) N{sub}2O plasma oxidationSangyeon Han; Hyungcheol Shin20002000, vol.100, no.147
Low-temperature formation of ultra-thin SiO{sub}2 films using oxygen radicals and the application for MOSFET gate insulatorM. Kanehiro; Y. Ueda; T. Kimoto; H. Matsunami20002000, vol.100, no.147
Oxidation behaviors of Ti-polycide gate stack during gate re-oxidationTae-Kyun Kim; Se-Aug Jang; Jun-Mo Yang; Tae-Su Park; In-Seok Yeo; Jae-Sung Roh; Jeong-Mo Hwang20002000, vol.100, no.147
Prospects and key issues for compound semiconductor quantum devicesHideki Hasegawa; Seiya Kasai20002000, vol.100, no.147
Development activities at ASET for 100-nm lithography and beyondShinji Okazaki20002000, vol.100, no.147
A novel integration technology for gigabit DRAM with 0.115μm design ruleHyuppil Noh; Sangdon Lee; Woncheol Cho; Jongrim Lee; Gucheol Jeong; Sung-keun Chang; Hyunjo Yang; Dongseok Kim; Junki Kim; Jisoo Park; Junsik Lee; Jinwon Park; Hee-koo Yoon20002000, vol.100, no.147
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