中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


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2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2000, vol.100, no.1 2000, vol.100, no.147 2000, vol.100, no.148 2000, vol.100, no.149 2000, vol.100, no.2 2000, vol.100, no.235
2000, vol.100, no.236 2000, vol.100, no.265 2000, vol.100, no.266 2000, vol.100, no.305 2000, vol.100, no.306 2000, vol.100, no.318
2000, vol.100, no.370 2000, vol.100, no.405 2000, vol.100, no.406 2000, vol.100, no.505 2000, vol.100, no.506 2000, vol.100, no.547
2000, vol.100, no.548 2000, vol.100, no.549 2000, vol.100, no.57 2000, vol.100, no.58 2000, vol.100, no.641 2000, vol.100, no.642
2000, vol.100, no.683

题名作者出版年年卷期
Growth of high quality SiC bulk single crystalK. Nakayama; Y. Miyanagi; Y. Takata; H. Shiomi; S. Nishino20002000, vol.100, no.370
Photochemical deposition of selenide semiconductorsAtsushi Nakamura; Kazuki Takeuchi; Masaya Ichimura; Eisuke Arai20002000, vol.100, no.370
Preparation of SnS thin films by electrochemical depositionK. Takeuchi; M. Ichimura; E. Arai20002000, vol.100, no.370
Negative differential resistance of trench-type InGaAs quantum wire FETs on a (311)A non-planar InP substratesKazuyuki Matsumoto; Takeyoshi Sugaya; Kee-Yong Jang; Toshiyuki Shimizu; Mutsuo Ogura; Kenji Yonei; Yoshinobu Sugiyama; Takashi Sekiguchi20002000, vol.100, no.370
The electrical property of InN grown by RF-MBEYoshiki Saito; Tomohiro Yamaguchi; Tsutomu Araki; Yasushi Nanishi; Nobuaki Teraguchi; Akira Suzuki20002000, vol.100, no.370
InN/Si heterojunction fabricated by RF-MBE and its band offsetTakashi Yamahita; Kouji Suzuki; Takao Nakano; Masashiro Yoshimoto; Junji Saraie20002000, vol.100, no.370
Growth of undoped ZnO films with high carrier mobilities by radical source molecular beam epitaxy (RS-MBE)K. Nakahara; T. Tanabe; H. Takasu20002000, vol.100, no.370
Suppression of invading fluorine atoms into AlInAs/InGaAs by phosphidizationTakashi Sugino; Kensuke Yamamoto; Norio Fujita; Shigeru Nakajima20002000, vol.100, no.370
An InGaP/GaAs composite channel FET for high power device applicationKunio Tanaka; Ken Nakata; Kenji Otobe; Shigeru Nakajima20002000, vol.100, no.370



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