中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
A low voltage hybrid bulk/SOI CMOS active pixel image sensorChen Xu; Weiquan Zhang; Mansun Chan20012001, vol.22，no.5
A time-dependent, surface potential based compact model for MOS capacitorsJames Victory; Colin C. Mc-Andrew; Kiran Gullapalli20012001, vol.22，no.5
Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistorsMartin Sanden; Ognian Marinov; M. Jamal Deen; Mikael Ostling20012001, vol.22，no.5
A dual-voltage self-clamped IGBT for automotive ignition applicationsZ. John Shen; Stephen P. Robb20012001, vol.22，no.5
A novel high performance stacked LDD RF LDMOSFETJun Cai; Changhong Ren; N. Balasubramanian; Johnny K. O. Sin20012001, vol.22，no.5
Interface traps at high doping drain extension region in sub-0.25-μm MOSTsGang Chen; M. F. Li; Xing Yu20012001, vol.22，no.5
Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectricsJeffrey A. Babcock; Scott G. Balster; Angelo Pinto; Christoph Dirnecker; Philipp Steinmann; Reiner Jumpertz; Badih El-Kareh20012001, vol.22，no.5
Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectricYee-Chia Yeo; Qiang Lu; Pushkar Ranade; Hideki Takeuchi; Kevin J. Yang; Igor Polishchuk; Tsu-Jae King; Chenming Hu; S. C. Song; H. F. Luan; Dim-Lee Kwong20012001, vol.22，no.5
Time-dependent breakdown of ultra-thin SiO{sub}2 gate dielectrics under pulsed biased stressBin Wang; John S. Suehle; Eric M. Vogel; Joseph B. Bernstein20012001, vol.22，no.5
Ta{sub}2O{sub}5/silicon barrier height measured from MOSFETs fabricated with Ta{sub}2O{sub}5 gate dielectricBenjamin Chihming Lai; Jing-Chi Yu; Joseph Ya-min Lee20012001, vol.22，no.5
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