中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
Device characteristics of the GaN/InGaN-doped channel HFETsYue-Ming Hsin; Hung-Tsao Hsu; Chang-Cheng Chuo; Jen-Inn Chyi20012001, vol.22, no.11
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTsVinayak Tilak; Bruce Green; Val Kaper; Hyungtak Kim; Tom Prunty; Joe Smart; James Shealy; Lester Eastman20012001, vol.22, no.11
Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequencyK. Shinohara; Y. Yamashita; A. Endoh; K. Hikosaka; T. Matsui; T. Mimura; S. Hiyamizu20012001, vol.22, no.11
Power electronics on InAlN/(In)GaN: prospect for a record performanceJan Kuzmik20012001, vol.22, no.11
Thin tunnel oxide grown on silicon substrate pretreated by CF{sub}4 plasmaJam Wem Lee; Tan Fu Lei; Chung-Len Lee20012001, vol.22, no.11
Low turn-on voltage field emission triode with selective growth of carbon nanotubesK. J. Chen; W. K. Hong; C. P. Lin; K. H. Chen; L. C. Chen; H. C. Cheng20012001, vol.22, no.11
Novel methods to incorporate deuterium in the MOS structuresM. H. Lee; C. -H. Lin; C. W. Liu20012001, vol.22, no.11
A deep submicron CMOS process compatible suspending high-Q inductorChung-Hui Chen; Yean-Kuen Fang; Chih-Wei Yang; C. S. Tang20012001, vol.22, no.11
Nitrogen implanted polysilicon resistor for high-voltage CMOS technology applicationChung-Hui Chen; Yean-Kuen Fang; Chih-Wei Yang; Ta-Wei Wang; Yung-Lung Hsu; Shun-Liang Hsu20012001, vol.22, no.11
Plasma charging damage on MOS devices with gate insulator of high-dielectric constant materialPei-Jer Tzeng; Yi-Yuan Chang; Kuei-Shu Chang-Liao20012001, vol.22, no.11
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