中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
A 0.5-μm 60-GHz high-power composite channel GaInAs/InP HEMT with low gate currentM. Boudrissa; E. Delos; X. Wallaert; D. Theron; J. C. De Jaeger20012001, vol.22, no.6
High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologiesC. H. Chen; Y. K. Fang; C. W. Yang; S. F. Ting; Y. S. Tsair; M. F. Wang; Y. M. Lin; M. C. Yu; S. C. Chen; C. H. Yu; M. S. Liang20012001, vol.22, no.6
Leakage mechanism in Cu damascene structure with methylsilane-Doped low-K CVD oxide as intermetal dielectricZhen-Cheng Wu; Chiu-Chih Chiang; Wei-Hao Wu; Mao-Chieh Chen; Shwang-Ming Jeng; Lain-Jong Li; Syun-Ming Jang; Chen-Hua Yu; Mong-Song Liang20012001, vol.22, no.6
Experimental demonstration of a silicon carbide IMPATT oscillatorLuo Yuan; James A. Cooper, Jr.; Michael R. Melloch; Kevin J. Webb20012001, vol.22, no.6
High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structureChing-Wei Lin; Li-Jing Cheng; Yin-Lung Lu; Yih-Shing Lee; Huang-Chung Cheng20012001, vol.22, no.6
High channel mobility in normally-off 4H-SiC buried channel MOSFETsShinsuke Harada; Seiji Suzuki Junji Senzaki Ryoji Kosugi; Kazuhiro Adachi; Kenji Fukuda; Kazuo Arai20012001, vol.22, no.6
Spiral inductors on Si p/p{sub}+ substrates with resonant frequency of 20 GHzHan-Su Kim; Dawei Zheng; A. J. Becker; Ya-Hong Xie20012001, vol.22, no.6
Proposal of a partial-ground-plane (PGP) silicon-on-insulator (SOI) MOSFET for deep Sub-0.1-μm channel regimeShin-Ichiro Yanagi; Atsushi Nakakubo; Yasuhisa Omura20012001, vol.22, no.6
An improved formula for the determination of the polysilicon dopingAlessandro S. Spinelli; Andrea Pacelli; Andrea L. Lacaita20012001, vol.22, no.6
The effect of fluorine from BF{sub}2 source/drain extension implants on performance of PMOS transistors with thin gate oxidesK. K. Bourdelle; H. -J. L. Gossmann; S. Chaudhry; A. Agarwal20012001, vol.22, no.6
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