中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2001, vol.22, no.1 2001, vol.22, no.10 2001, vol.22, no.11 2001, vol.22, no.12 2001, vol.22, no.6 2001, vol.22, no.7
2001, vol.22, no.8 2001, vol.22, no.9 2001, vol.22，no.2 2001, vol.22，no.3 2001, vol.22，no.4 2001, vol.22，no.5

题名作者出版年年卷期
Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devicesYung C. Liang; K. P. Gan; Ganesh S. Samudra20012001, vol.22, no.8
Pi-gate SOI MOSFETJong-Tae Park; Jean-Pierre Colinge; Carlos H. Diaz20012001, vol.22, no.8
A poly-Si TFT integrated gate-data line-crossover structure employing an air-cap for large-size AMLCD panelJin-Woo Park; Min-Cheol Lee; Woo-Jin Nam; In-Hyuk Song; Min-Koo Han20012001, vol.22, no.8
Fabrication of microcrystalline silicon TFTs using a high-density plasma approachAndand T. Krishnan; Sanghoon Bae; Stephen J. Fonash20012001, vol.22, no.8
Poly Si TFT fabricated by laser-induced In-situ fluorine passivation and laser dopingCheon-Hong Kim; Sang-Hoon Jung; Juhn-Suk Yoo; Min-Koo Han20012001, vol.22, no.8
A novel self-aligned bottom gate poly-Si TFT with in-situ LDDShengdong Zhang; Ruqi Han; Mansun J. Chan20012001, vol.22, no.8
high-frequency performance of diamond field-effect transistorHirotada Taniuchi; Hitoshi Umezawa; Takuya Arima; Minoru Tachiki; Hiroshi Kawarada20012001, vol.22, no.8
High quality gate dielectrics grown by rapid thermal processing using split-N{sub}2O technique on strained-Si{sub}0.91Ge{sub}0.09 FilmsL. K. Bera; W. K. Choi; C. S. Tan; S. K. Samanta; C. K. Maiti20012001, vol.22, no.8
High quality thermal oxide on LPSOI formed by high temperature enhanced MILCAlain Chun-Keung Chan; Hongmei Wang; Mansun J. Chan20012001, vol.22, no.8
Model of low frequency noise in polycrystalline silicon thin-film transistorsCharalabos A. Dimitriadis; George Kamarinos; Jean Brini20012001, vol.22, no.8
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