中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2001, vol.101, no.104 2001, vol.101, no.14 2001, vol.101, no.15 2001, vol.101, no.160 2001, vol.101, no.161 2001, vol.101, no.162
2001, vol.101, no.294 2001, vol.101, no.295 2001, vol.101, no.313 2001, vol.101, no.337 2001, vol.101, no.500 2001, vol.101, no.501
2001, vol.101, no.549 2001, vol.101, no.550 2001, vol.101, no.551 2001, vol.101, no.617 2001, vol.101, no.618 2001, vol.101, no.619
2001, vol.101, no.721 2001, vol.101, no.78 2001, vol.101, no.79 2001, vol.101. no.415 2001, vol.101. no.416

题名作者出版年年卷期
Ni Germano-salicide technology for high performance MOSFETsSiyoung Choi; J. -H. Ku; C. -J. Choi; K. Fujihara; H. -K. Kang; J. -T. Moon20012001, vol.101, no.160
A new chemical mechanical polishing method using the frozen etchant padYoun-Jin Oh; Gyung-Soon Park; Sung Yong Park; Jae -Ok Ryu; Tae Woo Jung; Il-Wook Kim; Chan-Hwa Chung20012001, vol.101, no.160
Nanoscale poly-Si line formation and its uniformityWoo Young Choi; Suk Kang Sung; Kyung Rok Kim; Jong Duk Lee; Byung-Gook Park20012001, vol.101, no.160
Low temperature nitridation of Si oxide utilizing activated nitrogenYukiharu Uraoka; Kosuke Sasada; Hiroshi Yano; Tomoaki Hatayama; T. Fuyuki20012001, vol.101, no.160
Influence of silicon wafer loading conditions on thickness uniformity of sub-5nm-thick oxide filmsMarkus Lenski; Yasutaka Kimura; Makoto Iwai; Hiroshi Sakuraba; Tetsuo Endoh; Fujio Masuoka20012001, vol.101, no.160
Improved oxide etching by the enhanced inductively coupled plasmaS. -G. Park; S. -B. Cho; H. -Y. Song; B. -H. O; J. -S. Oh; J. -W. Kim20012001, vol.101, no.160
Characteristics of SiO{sub}2 films formed at low temperature by remote plasma oxidationT. Iida; M. Kanehiro; T. Kimoto; H. Matsunami20012001, vol.101, no.160
Effects of WSi{sub}x-polycide gate processes on MOSFET reliability and characteristicsJin-Yang Kim; Yong-Chul Oh; Dong-Hyun Kim; Kyu-Taek Hyun; Hyoung-Woen Seo; Dae-Joong Won; Moon-Mo Jeong; Yun-Jae Lee; Yoon-Jae Man; Sang-Hyun Lee; Ho-Won Sun; Se-Myeong Jang; Chang-Huhn Lee; Hyun-Chang Kim20012001, vol.101, no.160
Side-gate length optimization for 50nm induced source/drain MOSFETsByung Yong Choi; Woo Young Choi; Young Jin Choi; Jong Duk Lee; Byung-Gook Park20012001, vol.101, no.160
Short channel effect on variable threshold voltage CMOS (VTCMOS)Hyunsik Im; T. Inukai; T. Saraya; T. Sakurai; T. Hiramoto20012001, vol.101, no.160
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