中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2001, vol.101, no.104 2001, vol.101, no.14 2001, vol.101, no.15 2001, vol.101, no.160 2001, vol.101, no.161 2001, vol.101, no.162
2001, vol.101, no.294 2001, vol.101, no.295 2001, vol.101, no.313 2001, vol.101, no.337 2001, vol.101, no.500 2001, vol.101, no.501
2001, vol.101, no.549 2001, vol.101, no.550 2001, vol.101, no.551 2001, vol.101, no.617 2001, vol.101, no.618 2001, vol.101, no.619
2001, vol.101, no.721 2001, vol.101, no.78 2001, vol.101, no.79 2001, vol.101. no.415 2001, vol.101. no.416

题名作者出版年年卷期
The InP-HEMT IC technology for 40-Gbit/s optical communicationsYasuro Yamane; Takatomo Enoki; Koichi Murata; Yohtaro Umeda; Yoshino K. Fukai; Suehiro Sugitani; Hiroto Kitabayashi20012001, vol.101, no.162
Microwave power performance of AlGaN/GaN heterojunction FETsM. Kuzuhara; N. Hayama; Y. Ando; K. Kunihiro; K. Kasahara; Y. Okamoto; K. Matsunaga; T. Nakayama; Y. Ohno; H. Miyamoto20012001, vol.101, no.162
Investigation of highly strained InGaP/InGaAs p-HEMT grown by using a reduced area growthSung-June Jo; Jeong Hoon Kim; Sang-Soon Kim; Jong-In Song20012001, vol.101, no.162
Characterization of temperature dependence of high-frequency performance of AlGaN/GaN HEMTsTakashi Mizutani; Mitsutoshi Akita; Shigeru Kishimoto20012001, vol.101, no.162
Low-frequency noise characteristics of In{sub}0.52Al{sub}0.48As/In{sub}0.60Ga{sub}0.40As metamorphic high electron mobility transistorsJeong Hoon Kim; Jong-In Song20012001, vol.101, no.162
Development of a RF bipolar transistor in a standard 0.35μm CMOS technologyI-Shan Michael Sun; Wai Tung Ng; Philip K. T. Mok; Hidenori Mochizuki; Katsumi Shinomura; Hisaya Imai20012001, vol.101, no.162
Development of Si NMOS low-power Tx MMIC chipsets for 5.8 GHz wireless PDA applicationsY. H. Chun; T. S. Kang; D. An; J. S. Kim; J. K. Rhee; H. M. Park; J. H. Jung; H. C. Park; Y. K. Seo; K. M. Song20012001, vol.101, no.162
Performance analyses of GaAs PHEMT for phase difference in millimeter wavesD. An; S. D. Lee; B. H. Lee; S. C. Kim; T. S. Kang; J. S. Kim; J. K. Rhee20012001, vol.101, no.162
RESURF LDMOS technologies for high voltage integrated circuitsOh-Kyong Kwon; Mueng-Ryul Lee; Young-Sun Na20012001, vol.101, no.162
A unified analytical SOI MOSFET model for fully- and partially-depleted SOI devicesYun-Seop Yu; Sung-Woo Hwang; Doyeol Ahn20012001, vol.101, no.162
12



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024